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  2m-bit Datasheet PDF File

For 2m-bit Found Datasheets File :: 3468    Search Time::1.078ms    
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    MB84VD2008 MB84VD2008-10 MB84VD2009 MB84VD2009-10

Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
Part No. MB84VD2008 MB84VD2008-10 MB84VD2009 MB84VD2009-10
OCR Text ...MOS 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM MB84VD2008-10/MB84VD2009-10 s FEATURES * Power supply voltage of 2.7 to 3.6 V * High...Bit feature for detection of program or erase cycle completion * Ready-Busy output (RY/BY) Hardware ...
Description 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM

File Size 181.11K  /  30 Page

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    VP2611 VP2611CGGH1R

Mitel Networks Corporation
Part No. VP2611 VP2611CGGH1R
OCR Text ...sion with rates between 64K and 2M bits per second. With a 27 MHz clock the device will accept data produced to full CIF resolution at 30 Hz...BIT STREAM 64kb to 2Mb/s CCIR601 RESOLUTION Y 720 X 288 Cr/Cb 360 x 288 Y 720 X 240 Cr/Cb 360 x 2...
Description H.261 Encoder

File Size 150.33K  /  14 Page

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    VP2612 VP2612CGGPFR

Mitel Semiconductor
MITEL[Mitel Networks Corporation]
Part No. VP2612 VP2612CGGPFR
OCR Text ...r line rates of between 64K and 2M bits per second. With a 27MHz clock rate full CIF resolution images can be coded at a frame rate of up to...bit stream. It also calculates the differential motion vectors and macroblock addresses from the abs...
Description Video Multiplexer(用于视频电话和视频会议的视频多路转换

File Size 154.39K  /  11 Page

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    VT82C693

VIA Technologies
ETC
N.A.
Part No. VT82C693
OCR Text ...high speed systems - Mixed 1M / 2M / 4M / 8M / 16MxN DRAMs - 8 banks up to 1GB DRAMs (128Mb DRAM technology) - Flexible row and column addresses - 64-bit data width only - 3.3V DRAM interface with 5V-tolerant inputs - Programmable I/O drive...
Description APOLLO PRO-PLUS

File Size 122.76K  /  7 Page

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    W536030A W536060A W536090A W536120A

Winbond Electronics
WINBOND[Winbond]
Part No. W536030A W536060A W536090A W536120A
OCR Text ...Speech function - Provided 1M / 2M/ 3M/ 4M bits Voice ROM for W536030A/060A/090A/120A based on 5 bits MDPCM algorithm - Voice ROM (V-ROM) av...bit 0 can be used to specify CMOS/NMOS driving capability option. Initial state is input mode. RA3 m...
Description MDPCM Voice/Melody w/64x16 ~ 40x8 LCD, 256x4x2 LCD RAM, 1/8&1/16 Duty, 1/4&1/5 Bias, 32Kx20 ROM, 1.4
VOICE/ MELODY / LCD CONTROLLER

File Size 95.57K  /  12 Page

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    K4S641632H-TL70 K4S641632H-TC70 K4S641632H-TC75 K4S641632H-TC60 K4S640832H-TC75 K4S641632H-L60 K4S640432H-TC K4S640432H-

Samsung semiconductor
Samsung Electronic
Part No. K4S641632H-TL70 K4S641632H-TC70 K4S641632H-TC75 K4S641632H-TC60 K4S640832H-TC75 K4S641632H-L60 K4S640432H-TC K4S640432H-TC75 K4S640432H-L75 K4S640832H-L75 K4S641632H-L70 K4S641632H-L75 K4S640432H-TL75 K4S640832H-TL75 K4S641632H-TL60 K4S641632H-TL75
OCR Text ... CMOS SDRAM 4M x 4Bit x 4 / 2M x 8Bit x 4 / 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES * JEDEC standard 3.3V power supply * LVTTL ...bit write operation * DQM (x4,x8) & L(U)DQM (x16) for masking * Auto & self refresh * 64ms refresh p...
Description 64Mb H-die SDRAM Specification

File Size 142.04K  /  14 Page

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    K4S643232C-TL55 K4S643232C-TL70 K4S643232C-TC70 V62C5181024LL-70P K4S643232C K4S643232C-TC10 K4S643232C-TC55 K4S643232C-

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S643232C-TL55 K4S643232C-TL70 K4S643232C-TC70 V62C5181024LL-70P K4S643232C K4S643232C-TC10 K4S643232C-TC55 K4S643232C-TC60 K4S643232C-TC80 K4S643232C-TL10 K4S643232C-TL60 K4S643232C-TL80 K4S643232C-TC_L10 K4S643232C-TC_L55 K4S643232C-TC_L60 K4S643232C-TC_L70 K4S643232C-TC_L80 K4S643232C-TC/L10 K4S643232C-TC/L55 K4S643232C-TC/L60 K4S643232C-TC/L70 K4S643232C-TC/L80
OCR Text 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 November 1999 Samsung Electronics reserves the right to chan...bit write operation DQM for masking Auto & self refresh 15.6us refresh duty cycle CMOS SDRAM G...
Description 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

File Size 1,151.85K  /  43 Page

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    K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4S643232E-TC70 K4S643232E K4S643232E-TC45 K4S643232E-TC50 K4S643232E-TC

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4S643232E-TC70 K4S643232E K4S643232E-TC45 K4S643232E-TC50 K4S643232E-TC55 K4S643232E-TC60 K4S643232E-TL50 K4S643232E-TL60 K4S643232E-TC/L/E/N/I/P
OCR Text 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.3 October 2001 Samsung Electronics reserves the right to chang...bit write operation DQM for masking Auto & self refresh 15.6us refresh duty cycle CMOS SDRAM GEN...
Description 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet

File Size 100.95K  /  12 Page

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    K4S643232E-TN70 K4S643232E-TE50 K4S643232E- K4S643232E-TE60 K4S643232E-TE70 K4S643232E-TN50 K4S643232E-TN60 K4S643232E

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S643232E-TN70 K4S643232E-TE50 K4S643232E- K4S643232E-TE60 K4S643232E-TE70 K4S643232E-TN50 K4S643232E-TN60 K4S643232E
OCR Text 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) Extended Temperature 86-TSOP Revision 1.4 December 2001 Samsung Ele...bit write operation DQM for masking Auto & self refresh 15.6us refresh duty cycle(4K/64ms) CMOS S...
Description LED ORANGE DIFFUSED 2X5 RECT 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3
LED ORANGE DIFFUSED 2X5 RECT
CONNECTOR ACCESSORY
LED ORG/RED DIFFUSED 2X5MM RECT
-2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)

File Size 99.80K  /  12 Page

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