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NEC, Corp.
NEC Corp.
NEC[NEC]
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| Part No. |
UPD23C16300GZ-XXX-MJH UPD23C16300 UPD23C16300F9-BC3 UPD23C16300F9-XXX-BC3 UPD23C16300GZ-MJH
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| OCR Text |
2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE)
Description
The PD23C16300 is a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE mode : 2,097,152 words by 8 bits, WORD mode : 1,048,576 words ... |
| Description |
16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE) 1,600位掩膜可编程ROM00万字位（字节模式 100万字6位（字模式）
RF/Coaxial Connector; RF Coax Type:SMA; Contact Termination:Crimp; Body Style:Right Angle Plug; RG Cable Type:58, 58A, 58C, 141, 303, LMR195, Belden 7806A RoHS Compliant: Yes 1,600位掩膜可编程ROM00万字位（字节模式 100万字6位（字模式）
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| File Size |
236.77K /
16 Page |
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Cypress Semiconductor, Corp.
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| Part No. |
CY7C1518JV18-250BZC CY7C1518JV18-300BZXC
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| OCR Text |
...ures 72-mbit density (4m x 18, 2m x 36) 300 mhz clock for high bandwidth 2-word burst for reducing address bus frequency double data ra...bit burst counter. addresses for read and write are latched on alternate rising edges of the input (... |
| Description |
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
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| File Size |
895.67K /
23 Page |
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it Online |
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Cypress Semiconductor, Corp.
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| Part No. |
CY7C1543V18-300BZI CY7C1545V18-375BZI
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| OCR Text |
...1543v18 ? 4m x 18 cy7c1545v18 ? 2m x 36 functional description the cy7c1541v18, cy7c1556v18, cy7c1543v18, and cy7c1545v18 are 1.8v synchrono...bit words (cy7c1541v18), 9-bit words (cy7c1556v18), 18-bit words (cy7c1543v18), or 36-bit words (cy7... |
| Description |
72-Mbit QDRII SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 4M X 18 QDR SRAM, 0.45 ns, PBGA165
72-Mbit QDRII SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 2M X 36 QDR SRAM, 0.45 ns, PBGA165
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| File Size |
453.24K /
28 Page |
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it Online |
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Electronic Theatre Controls, Inc.
Samsung Semiconductor Co., Ltd.
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| Part No. |
K8D3216UTC-PI07T K8D3216UTC-TC070 K8D3216UBC-DC070 K8D3216UBC-DI080 K8D3216UBC-TC070
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| OCR Text |
2m x16) dual bank nor flash memory revision history revision no. 0.0 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 remark preliminary final history init...bit (4m x8/2m x16) du al bank nor flash memory the k8d3216u featuring single 3.0v power supply, is a... |
| Description |
2M X 16 FLASH 2.7V PROM, 70 ns, PDSO48 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48
2M X 16 FLASH 2.7V PROM, 70 ns, PBGA48 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48
2M X 16 FLASH 2.7V PROM, 80 ns, PBGA48
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| File Size |
729.03K /
44 Page |
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it Online |
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NEC, Corp.
NEC Corp.
NEC[NEC]
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| Part No. |
UPD23C32300GZ-XXX-MJH UPD23C32300 UPD23C32300F9-BC3 UPD23C32300F9-XXX-BC3 UPD23C32300GZ-MJH
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| OCR Text |
2M-WORD BY 16-BIT (WORD MODE)
Description
The PD23C32300 is a 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE mode : 4,194,304 words by 8 bits, WORD mode : 2,097,152 words by 16 bits). The active levels ... |
| Description |
32m-bit MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE) 32兆位掩膜可编程ROM的分位（字节模式 200万字6位（字模式）
CAP 0.01UF 100V 5% X7R SMD-0805 TR-13 PLATED-NI/SN 32兆位掩膜可编程ROM的分位（字节模式 200万字6位（字模式）
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| File Size |
236.14K /
16 Page |
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it Online |
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