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Sony, Corp.
SONY[Sony Corporation]
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| Part No. |
SLD323V-3 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25
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| OCR Text |
...antum Well Separate Confinement heterostructure Features * High power Recommended optical power output: Po = 1.0W * Low operating current: Iop = 1.4A (Po = 1.0W) Applications * Solid state laser excitation * Medical use * Material processes... |
| Description |
Audio CODEC IC; IC Function:Audio CODEC IC; Package/Case:24-TSSOP; IC Generic Number:4270; Leaded Process Compatible:No; Number of Bits:24; Number of Channels:1; Operating Temp. Max:70 C; Operating Temp. Min:-10 C 1W的高功率密度激光二极管
Stereo CODEC IC; IC Function:Stereo CODEC IC; Package/Case:28-TSSOP; Leaded Process Compatible:No; Operating Temp. Max:-40 C; Operating Temp. Min:85 C; Peak Reflow Compatible (260 C):No; Supply Voltage:3.1V RoHS Compliant: Yes
Audio CODEC IC; IC Function:Audio Codec; Package/Case:24-TSSOP; Leaded Process Compatible:No; No. of Bits:24; No. of Channels:1; Operating Temp. Max:70 C; Operating Temp. Min:-10 C; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes
Audio CODEC IC; IC Function:Audio Codec; Package/Case:64-LQFP; Leaded Process Compatible:No; No. of Bits:24; No. of Channels:6; Operating Temp. Max:85 C; Operating Temp. Min:-40 C; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes
24BIT CODEC AUDIO, 4271, TSSOP28; Resolution, Bits:24bit; Sample Rate:192kHz; DACs, No. of:2; Interface Type:Serial; Output Type:Differential; Voltage, Supply Min:2.37V; Voltage, Supply Max:5.25V; Termination Type:SMD;
A/D Converter (A-D) IC; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
High Power Density 1W Laser Diode
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| File Size |
66.85K /
7 Page |
 View
it Online |
Download Datasheet
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RFMD[RF Micro Devices]
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| Part No. |
TA0012
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| OCR Text |
... Gallium Arsenide (GaAs/AlGaAs) heterostructure, the power and efficiency performance is the highest of any commercially available integrated solution. Being a bipolar 13-64
structure, the part can operate from a single positive voltage ... |
| Description |
New High Power, High Efficiency HBT GSM Power Amplifier
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| File Size |
73.22K /
4 Page |
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it Online |
Download Datasheet |
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TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TGF4230-EEU TGF4230
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| OCR Text |
...ingle gate 1.2 mm Discrete GaAs heterostructure Field Ef fect Transistor (HFET) designed for high- efficiency power applications up to 1 2- GHz in Class A and Class AB operation. Bond - pad and backside metalization is gold plated for compa... |
| Description |
1.2mm Discrete HFET
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| File Size |
178.29K /
7 Page |
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it Online |
Download Datasheet |
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TriQuint Semiconductor, Inc.
TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TGF4230-SCC
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| OCR Text |
...ingle gate 1.2 mm Discrete GaAs heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation. Bond-pad and backside metalization is gold plated for compatibili... |
| Description |
DC - 12 GHz Discrete HFET
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| File Size |
217.49K /
9 Page |
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it Online |
Download Datasheet |
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TriQuint Semiconductor,Inc.
TriQuint Semiconductor, Inc.
TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TGF4240-SCC
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| OCR Text |
...ingle gate 2.4 mm Discrete GaAs heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation. Typical performance at 8.5 GHz is 31.5 dBm power output, 10 dB Ga... |
| Description |
2.4 mm Discrete HFET X BAND, Si, N-CHANNEL, RF POWER, HFET
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| File Size |
175.80K /
7 Page |
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it Online |
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TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TGF4250-SCC
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| OCR Text |
...ingle gate 4.8 mm discrete GaAs heterostructure Field Effect Transistor (HFET) designed for high efficiency power applications up to 10.5 GHz in Class A and Class AB operation. Typical performance at 2 GHz is 34 dBm power output, 13 dB gain... |
| Description |
DC - 10.5 GHz Discrete HFET
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| File Size |
321.54K /
9 Page |
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it Online |
Download Datasheet |
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TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TGF4260-SCC
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| OCR Text |
...ingle gate 9.6 mm discrete GaAs heterostructure Field Effect Transistor (HFET) designed for high efficiency power applications up to 10.5 GHz in Class A and Class AB operation. Typical performance at 6 GHz is 37dBm power output, 9.5 dB Gain... |
| Description |
9.6 mm Discrete HFET
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| File Size |
423.13K /
9 Page |
View
it Online |
Download Datasheet |
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