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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
CLX34-10 CLX34 CLX34-00 CLX34-05
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| OCR Text |
...ration current VDS = 2 V, VGS = 0 V Gate threshold voltage VDS = 3 V, ID = 60 mA Drain current at pinch-off, low VDS VDS = 3 V, VGS = -3.5 V...59 54 49 44 38 32 25 18 11 4 -2 -8 |S21| [magn] 4,453 3,402 2,688 2,208 1,872 1,624 1,433 1,283 1,16... |
| Description |
HiRel X-Band GaAs Power-MESFET
伊雷X波段砷化镓功率场效应
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| File Size |
611.20K /
9 Page |
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
CLX30-10 CLX30 CLX30-00 CLX30-05
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| OCR Text |
...ration current VDS = 2 V, VGS = 0 V Gate threshold voltage VDS = 3 V, ID = 24 mA Drain current at pinch-off, low VDS VDS = 3 V, VGS = -3.5 V...59 -64 -70 -77 -84 -91 -97 -102 -106 |S22| [magn] 0,410 0,426 0,440 0,452 0,465 0,479 0,488 0,497 0,... |
| Description |
HiRel X-Band GaAs Power-MESFET
Reed Relay; Contacts:SPST; Contact Carry Current:1A; Coil Voltage DC Max:24V; Relay Terminals:Thru Hole; Switching Current Max:0.5A; Switching Voltage Max:200V; Contact Carrying Power:10W; Leaded Process Compatible:Yes RoHS Compliant: Yes
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| File Size |
619.04K /
9 Page |
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United Monolithic Semic...
UMS[United Monolithic Semiconductors]
United Monolithic Semiconductors GmbH
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| Part No. |
CHA5390-99F CHA5390
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| OCR Text |
...actured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is av...59 162,62 131,98 104,51 86,80 55,09 12,96 -29,71 -67,30 -102,02 -128,52 -147,84 -163,57 -176,44 172,... |
| Description |
24-30GHz Medium Power Amplifier 24 - 30GHz的中等功率放大器
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| File Size |
175.68K /
8 Page |
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it Online |
Download Datasheet |
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ATMEL CORP
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| Part No. |
ATSAM3108B
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| OCR Text |
... 1a typical deep power-down, 0.5 mw/mips typical operating available in a 64-lead lqfp package ideal for real-time audio application...59, 58, 56, 55, 52, 51, 50, 49 i/o 1 slave 8-bit interface data. output if cs and rd are low (re... |
| Description |
SPECIALTY CONSUMER CIRCUIT, PQFP64
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| File Size |
203.74K /
23 Page |
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it Online |
Download Datasheet |
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United Monolithic Semic...
UMS[United Monolithic Semiconductors]
United Monolithic Semiconductors GmbH
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| Part No. |
CHA5215AFKF_23 CHA5215A CHA5215A99F_00 CHA5215AFKF/23 CHA5215A99F/00
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| OCR Text |
...is manufactured with a standard 0.7m implanted power MESFET, air bridges, via holes through the substrate and electron beam gate lithography...59.89 -59.38 -58.47 -57.61 -56.81 -55.59 -55.19 -54.39 -53.67 S12 / 162.4 142.3 129.4 113.1 101.3 88... |
| Description |
5.8GHz Medium Power Amplifier 5.8GHz的中等功率放大器
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| File Size |
180.86K /
12 Page |
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it Online |
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United Monolithic Semiconductors GmbH
UMS[United Monolithic Semiconductors]
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| Part No. |
CHA2295-99F_00 CHA2295 CHA2295-99F/00
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| OCR Text |
...actured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is av...59,20 -69,08 -78,21 -88,72 -98,10 -107,19 -114,33 -23,68 -52,43 -78,77 -97,85 -100,60 -1,39 -3,71 -1... |
| Description |
6 - 11GHz Buffer Splitter Amplifier 6 - 11GHz的缓冲放大器，分配器
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| File Size |
113.62K /
7 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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