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Sanyo
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| Part No. |
2SC3778 0378
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| OCR Text |
... noise figure : NF=2.2dB typ (f=0.9GHz). * High power gain : MAG=14dB typ (f=0.9GHz). * High cutoff frequency : fT=5.0GHz typ.
JEDEC : TO-92 EIAJ : SC-43
C : Collector E : Emitter B : Base SANYO : NP
Specifications
Absolute Maximu... |
| Description |
NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amplifier, Wide-Band Amplifier Applications
From old datasheet system
NPN Epitaxial Planar Silicon Transistors
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| File Size |
124.32K /
5 Page |
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it Online |
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hitachi
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| Part No. |
2SC3793
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| OCR Text |
... -- -- -- Typ -- -- -- -- -- -- 0.7 2.9 Max -- -- 1 1 200 0.5 1 -- V pF GHz Unit V V A A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = VCB = 15 V, IE = 0 VEB = 3 V, IC = 0 VCE = 10 V, IC = 5 mA I C = 20 mA, IB = 4 mA VCB = 10 V, IE ... |
| Description |
Silicon NPN Epitaxial
From old datasheet system
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| File Size |
22.63K /
4 Page |
View
it Online |
Download Datasheet |
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Matsshita / Panasonic
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| Part No. |
2SC3937 0621
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| OCR Text |
....10.1
s Features
q q q q
0.425
1.250.1
0.425
Low noise figure NF. High gain. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the ma... |
| Description |
Transistor
From old datasheet system
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| File Size |
45.72K /
3 Page |
View
it Online |
Download Datasheet |
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panasonic
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| Part No. |
2SC3937
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| OCR Text |
0.425)
0.30.0
+0.1
0.150.05
+0.10
s Features
q q q q
3
Low noise figure NF. High gain. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packin... |
| Description |
SMini3-G1
From old datasheet system
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| File Size |
56.55K /
3 Page |
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it Online |
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Sanyo
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| Part No. |
2SC4003
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| OCR Text |
... VCE(sat) VBE(sat) VCB=300V, IE=0 VEB=4V, IC=0 VCE=10V, IC=50mA VCE=30V, IC=10mA IC=50mA, IB=5mA IC=50mA, IB=5mA 400 400 5 4 3 0.25 5.0 60* 70 0.6 1.0 Conditions Ratings min typ max 0.1 0.1 200* MHz V V V V V pF pF s s Unit A A
V(BR)CBO ... |
| Description |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications
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| File Size |
78.33K /
4 Page |
View
it Online |
Download Datasheet |
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Matsshita / Panasonic
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| Part No. |
2SC4152 0649
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| OCR Text |
0.70.1
For high breakdown voltage high-speed switching I Features
* High-speed switching * High collector to base voltage VCBO * Wide area of safe operation (ASO) * Satisfactory linearity of forward current transfer ratio hFE * Full-pac... |
| Description |
Power Transistors
From old datasheet system
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| File Size |
69.01K /
4 Page |
View
it Online |
Download Datasheet |
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Sanyo
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| Part No. |
2SC4257 0458
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| OCR Text |
...2 3.6 5.1 2.7 6.3 4.5 1.3
18.0
5.6
1.2
14.0
15.1
0.8
0.4
1
2
3 2.7
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Volta... |
| Description |
NPN Triple Diffused Planar Silicon Transistor 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications
From old datasheet system
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| File Size |
80.38K /
3 Page |
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it Online |
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hitachi
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| Part No. |
2SC4259
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| OCR Text |
...F VAGC Min 30 -- -- -- -- 50 -- 0.7 10 -- 1.8 Typ -- -- -- -- -- -- 0.6 1.0 15 3.0 -- Max -- 0.3 10 1.0 5.0 180 0.9 -- -- 4.5 2.7 pF GHz dB dB V Unit V A A A V Test conditions I C = 10 A, IE = 0 VCB = 15 V, IE = 0 VCE = 25 V, RBE = VEB = 3... |
| Description |
Silicon NPN Epitaxial
From old datasheet system
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| File Size |
15.65K /
4 Page |
View
it Online |
Download Datasheet |
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hitachi
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| Part No. |
2SC4265
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| OCR Text |
... -- -- -- -- -- -- -- Max -- -- 0.5 10 1.0 -- 1.5 -- pF MHz Unit V V A A V Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = VCE = 15 V, IE = 0 VEB = 3 V, IC = 0 I C = 20 mA, IB = 4 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MH... |
| Description |
Silicon NPN Epitaxial
From old datasheet system
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| File Size |
14.63K /
3 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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