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For 0.6us Found Datasheets File :: 164    Search Time::1.641ms    
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    SPECtek
Part No. S80016LK7
OCR Text ...inputs and outputs Single +3.3V 0.3V power supply The x16 devices are optimized for both single and dual rank DIMM applications. The x8 devi...6us CL = 3 SELF REFRESH CURRENT (Self refresh parts only, part M) Symbol Icc1 Idd2 Idd2 Icc3 Icc4 Ic...
Description 128Mb :x4 x8 x16 SDRAM 3.3V

File Size 508.48K  /  9 Page

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    优先(苏州)半导体有限公
Part No. ES29DL160EB-12TG ES29DL320ET-80TG ES29DL640ET-80TG ES29DS160ET-80TG ES29DL160FT-80TG ES29DL320FT-80TG ES29DL400FT-80TG ES29DL640FT-80TG ES29DL800FT-80TG ES29BDS160DB-12TG ES29BDS160EB-12TG ES29BDS320FB-12TG ES29BDS400FT-80TG ES29BDS800FT-80TG ES29BDS640FT-80TG ES29BDS320ET-80TG ES29BDS400EB-12TG ES29BDS320DB-12TG ES29BDS320FT-80TG ES29BDS640ET-80TG ES29BDS320EB-12TG ES29BDS160FB-12TG -ES29BDS160EB-12TG -ES29DL320FT-80TG
OCR Text 0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES * Single power supply operation - 2.7V -3.6V for read, program and erase operatio...6us/byte, 8us/word ( typical ) - Sector erase time : 0.7sec/sector ( typical ) * Power consumption (...
Description 16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

File Size 727.12K  /  54 Page

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    优先(苏州)半导体有限公
Excel Semiconductor Inc...
Part No. ES29F160EB-12TG ES29F400EB-12TG ES29F640EB-12TG ES29F800EB-12TG ES29F320EB-12TG ES29LV640DB-12TG
OCR Text 0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES * Single power supply operation - 2.7V -3.6V for read, program and erase operatio...6us/byte, 8us/word ( typical ) - Sector erase time : 0.7sec/sector ( typical ) * Power consumption (...
Description 16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

File Size 715.65K  /  54 Page

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    Freescale Semiconductor
Part No. MCZ33889
OCR Text 0, 12/2006 System Basis Chip with Low Speed Fault Tolerant CAN Interface An SBC device is a monolithic IC combining many functions repea...6us 8 16 30 25us loop time Tx to Rx, with bus failure and +-1.5V gnd shift, tLOOPRD/DR-F+GS 5 nod...
Description System Basis Chip

File Size 563.60K  /  60 Page

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    意法半导
STMicroelectronics N.V.
Part No. SMA6J5.06.0A-TR SMA6J12A-TR SMA6J33A-TR SMA6J13A-TR SMA6J70A-TR SMA6J6.5A-TR SMA6J18A-TR SMA6J58A-TR SMA6J28A-TR SMA6J48A-TR SMA6J5.0A-TR SMA6J6.0A-TR SMA6J8.5A-TR SMA6J5.06.0CA-TR SMA6J6.5CA-TR SMA6J8.5CA-TR SMA6J10A-TR SMA6J12CA-TR SMA6J33CA-TR -SMA6J100CA-TR
OCR Text ...d series Low leakage current: - 0.2 A at 25 C - 1 A at 85 C Operating Tj max: 175 C JEDEC registered package outline A K Unidi...6US 6UT 6UU 6UV 6UW 6UX 6UY 6UZ 6UAA Type SMA6J5.0CA-TR SMA6J6.0CA-TR SMA6J6.5CA-TR SMA6J8.5CA-TR SM...
Description High junction temperature Transil TM 高结温Transil商标
High junction temperature Transil TM 高结Transil商标

File Size 81.81K  /  10 Page

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    Samsung Electronic
Part No. K4S161622E-TC/I/E
OCR Text 0.0 mar. '01 1m x 16 sdram revision 0.0 march 2001 512k x 16bit x 2 banks synchronous dram lvttl samsung electronics reserves the right to c...6us refresh duty cycle (2k/32ms) general description features functional block diagram 512k x 1...
Description 512K x 16Bit x 2 Banks Synchronous DRAM Data Sheet

File Size 658.98K  /  42 Page

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    K4H281638L-LCB3 K4H281638L-LCCC K4H281638L-LCCD

Samsung semiconductor
Part No. K4H281638L-LCB3 K4H281638L-LCCC K4H281638L-LCCD
OCR Text ...ddr sdram k4h281638l 2 of 32 1.0 key features ............ ................. ................ ................ ................. ...........6us refresh interval(4k/64ms refresh) ? maximum burst refresh cycle : 8 ? 66pin tsop ii lead-free ...
Description 128Mb L-die DDR SDRAM Specification

File Size 478.42K  /  32 Page

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    K4S160822DT-G/F10 K4S160822DT-G/F7 K4S160822D K4S160822DT-G/FL K4S160822DT-GL

SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S160822DT-G/F10 K4S160822DT-G/F7 K4S160822D K4S160822DT-G/FL K4S160822DT-GL
OCR Text 0 (oct. 1999) 2mx8 sdram revision 1.0 october 1999 1m x 8bit x 2 banks synchronous dram lvttl samsung electronics reserves the right to...6us refresh duty cycle(2k/32ms) general description features functional block diagram 1m x 8bi...
Description 2M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO44
2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

File Size 1,193.25K  /  46 Page

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    KM416S1120DT-G/F7 KM416S1120DT-G/F6 KM416S1120DT-G/F10 KM416S1120DT-G/F8 KM416S1120DT-G/FC KM416S1120DT-G6

Samsung semiconductor
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
Part No. KM416S1120DT-G/F7 KM416S1120DT-G/F6 KM416S1120DT-G/F10 KM416S1120DT-G/F8 KM416S1120DT-G/FC KM416S1120DT-G6
OCR Text ...istics table format. revision 1.0 (february 1999) - final ? changed trdl of km416s1120d-6 @ cl3 from 2clk to 1clk ? changed tras and trc ...6us refresh duty cycle (2k/32ms) general description features functional block diagram 512k x 1...
Description 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
512K x 16bit x 2 Banks Synchronous DRAM LVTTL 12k × 16位2银行同步DRAM LVTTL

File Size 1,140.61K  /  43 Page

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    FA5640 FA5641 FA5642

Fuji Electric
Part No. FA5640 FA5641 FA5642
OCR Text ... consumption, during operation: 0.85 ma ? control of number of bottom skips by on-off width detection ? burst operation function under light...6us fa5642 auto recovery 10v no no 25us * see 10. (9) ?other advice on designing? for details of the...
Description Fuji Switching Power Supply Control IC

File Size 761.04K  /  35 Page

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