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10100 ZFMDK07A 30445C TRLPB A0100 40200 C206M S5100
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  0.7a Datasheet PDF File

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    SamHop Microelectronics...
Part No. STS126
OCR Text ...nt-continuous -pulsed b a ver 2.0 www.samhop.com.tw may,31,2012 1 details are subject to change without notice. w p d c -55 to 150 t a =25 ...7a v gs =10v r gen =6ohm total gate charge rise time turn-off delay time fall time turn-on delay tim...
Description Super high dense cell design for low RDS(ON).
N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 91.92K  /  7 Page

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    TY Semiconductor Co., L...
TY Semicondutor
Part No. KDS8958
OCR Text 0 a, 30 v r ds(on) = 0.028 @v gs =10v r ds(on) = 0.040 @v gs =4.5v p-channel -5 a, -30 v r ds(on) = 0.052 @v gs =- 10 v r ds(on) = 0.080 @v ...7a 21 28 v gs =10v,i d =7a,t j =125 32 42 v gs =4.5v,i d =6 a 27 40 v gs =-10v,i d =-5 a 41 52 v gs ...
Description N-Channel 7.0 A, 30 V RDS(ON) = 0.028 RDS(ON) = 0.040 Fast switching speed
Dual N & P-Channel PowerTrench MOSFET

File Size 196.42K  /  3 Page

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    2SC4445

Inchange Semiconductor Company Limited
Part No. 2SC4445
OCR Text ...acitance CONDITIONS IC=10mA; IB=0 IC=0.7a;IB=0.14A IC=0.7a;IB=0.14A VCB=800V; IE=0 VEB=7V; IC=0 IC=0.7a ; VCE=4V IE=-0.3A ; VCE=12V VCB=10V;f=1MHz 10 15 MIN 800 0.5 1.2 100 100 30 MHz pF |I |I TYP. MAX UNIT V V V A A SYMBOL V(BR)CEO VCEs...
Description Silicon NPN Power Transistors

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    2SC6112

Sanyo Semicon Device
Part No. 2SC6112
OCR Text ...IB2=IC=7A, RL=50 1000 500 7 500 0.5 3.0 0.3 Conditions Ratings min typ max 1.0 1.5 Unit V V V V V V s s s Package Dimensions unit : mm (typ) 7507-001 10.2 5.1 2.7 3.6 4.5 1.3 Switching Time Test Circuit PW=20s D.C.1% INPUT VR ...
Description NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

File Size 47.67K  /  4 Page

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    2SC6113

Sanyo Semicon Device
Part No. 2SC6113
OCR Text ...IB2=IC=7A, RL=50 1000 500 7 500 0.5 3.0 0.3 40 8 18 80 1.0 1.5 MHz pF V V V V V V s s s Ratings min typ max 10 10 80 Unit A A Package Dimensions unit : mm (typ) 7504-001 3.4 Switching Time Test Circuit IB1 OUTPUT IB2 VR RB + 100F ...
Description NPN Triple Diffused Planar Silicon Transistor For 14, 21 inch TV Power Supply

File Size 49.23K  /  4 Page

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    SCH1301 SCH1301-TL-E

Sanyo Semicon Device
Part No. SCH1301 SCH1301-TL-E
OCR Text ...d on a ceramic board (900mm 2 5 0.8mm) 0.8 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characterist...7a, v gs =--2.5v 125 175 m w r ds (on)3 i d =--0.3a, v gs =--1.8v 165 280 m w r ds (on)4 i d =--0.1a...
Description General-Purpose Switching Device Applications
   General-Purpose Switching Device Applications

File Size 33.04K  /  4 Page

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    2SD1895

Inchange Semiconductor Company Limited
Part No. 2SD1895
OCR Text ...nt gain CONDITIONS IC=30mA ; IB=0 IC=7A ;IB=7mA IC=7A ;IB=7mA VCB=160V; IE=0 VCE=140V; IB=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V 2000 5000 30000 MHz MIN 140 2.5 3.0 100 100 100 |I |I |I TYP. MAX UNIT V V V A A A SYMBOL V(BR)CEO VCE...
Description Silicon NPN Darlington Power Transistors

File Size 126.01K  /  3 Page

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    2SD425 2SD426

Inchange Semiconductor Company Limited
Part No. 2SD425 2SD426
OCR Text ...ter breakdown voltage 2SD426 IC=0.1A ;IB=0 140 V 120 V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 5 V 2SD425 VCEsat Collector-emitter saturation voltage 2SD426 IC=7A; IB=0.7a 3.0 IC=6A; IB=0.6A V VBE B...
Description Silicon NPN Power Transistors

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    SFT1407

Sanyo Semicon Device
Part No. SFT1407
OCR Text ...onditions Ratings 45 20 14 56 1.0 20 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Sourc...7A ID=7A, VGS=10V ID=7A, VGS=4V Ratings min 45 1 10 1.2 5.8 9.7 21 29 28 41 2.6 typ max Unit V A A V...
Description N-Channel Silicon MOSFET General-Purpose Switching Device

File Size 46.45K  /  4 Page

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