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Linear Technology Corporation
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Part No. |
LTC5533 LTC5533NBSP LTC5533EDE
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OCR Text |
11GHz Precision Dual RF Power Detector
FEATURES
DESCRIPTIO
Two Independent Temperature Compensated Schottky Diode RF Peak Detectors 45dB Channel-to-Channel Isolation at 2GHz Wide Input Frequency Range: 300MHz to 11GHz* Wid... |
Description |
300MHz to 11GHz Precision Dual RF Power Detector
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File Size |
228.17K /
12 Page |
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TriQuint Semiconductor,Inc.
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Part No. |
TGA2710
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OCR Text |
...a2710 measured data frequency @ 11ghz, cw power vd = 7v, id = 1.4a vd = 8v, id = 1.4a pout gain id pout id gain
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance ... |
Description |
10.5 - 12GHz High Power Amplifier
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File Size |
197.18K /
15 Page |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
RMWB11001
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OCR Text |
...
Performance Data
RMWB11001, 11GHz Buffer Amplifier, Typical Performance On-wafer Measurements, Vd=4V, Idq=36mA 25 S21 20 S21 (dB) 15 S11 10 S22 5 0 9.5 -20 -25 12 -15 -5 S11, S22 (dB) -10 S21 (dB) 0 30 20 10 0 -10 -20 -30 -40 -15 -50 -6... |
Description |
11 GHz Buffer Amplifier MMIC
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File Size |
349.24K /
6 Page |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MGF0921A
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OCR Text |
...
20 19 18 Gp(dB) 17
freq.=2.11GHz 37 35 33 31
Po v.s. Pin freq.=2.11GHz
0.8 0.7
Id(RF) v.s. Pin freq.=2.11GHz 4 3
Ig(RF) v.s. Pin freq.=2.11GHz
0.6
2 Ig(RF)(mA)
Id(RF)(A) 0.5 0.4 0.3 0.2
29 Po(dBm) 27 25 23 21 Tc=8... |
Description |
LnS Band GaAs FET L & S BAND GaAs FET
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File Size |
427.43K /
24 Page |
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Filtronic Compound Semi... FILTRONIC[Filtronic Compound Semiconductors]
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Part No. |
FMA219
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OCR Text |
...ss than 0.5 dB decrease in S21 (11GHz), and no measurable effect on noise figure.
Phone: +1 408 850-5790 Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
Revised: 11/22/04 Email: sales@filcsi.com
PRELIMINARY
* POWER TRANSFER... |
Description |
X-BAND LNA MMIC
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File Size |
325.92K /
5 Page |
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Price and Availability
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