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  175c Datasheet PDF File

For 175c Found Datasheets File :: 15906    Search Time::1.047ms    
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    AOD4180

Alpha & Omega Semiconductors
Alpha & Omega Semicondu...
Part No. AOD4180
OCR Text ... and the maximum temperature of 175c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases...
Description 80V N-Channel MOSFET

File Size 260.62K  /  7 Page

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    IRLU024ZPBF IRLR024ZPBF

International Rectifier
Part No. IRLU024ZPBF IRLR024ZPBF
OCR Text ...hnology Ultra Low On-Resistance 175c Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 55V G S RDS(on) = 58m ID = 16A Description Specifically designed for Automotive applications, t...
Description AUTOMOTIVE MOSFET

File Size 275.42K  /  12 Page

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    IRF640 IRF640S

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. IRF640 IRF640S
OCR Text ...erature CONDITIONS Tj = 25 C to 175c Tj = 25 C to 175c; RGS = 20 k Tmb = 25 C; VGS = 10 V Tmb = 100 C; VGS = 10 V Tmb = 25 C Tmb = 25 C MIN. - 55 MAX. 200 200 20 16 11 64 136 175 UNIT V V V A A A W C 1 It is not possible to make connect...
Description N-channel TrenchMOS transistor(N娌?? TrenchMOS ?朵?绠?
N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 93.86K  /  9 Page

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    IRFBA90N20 IRFBA90N20D

IRF[International Rectifier]
Part No. IRFBA90N20 IRFBA90N20D
OCR Text ...1 0.1 1 20s PULSE WIDTH Tj = 175c 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.00 100 LIMITED BY PACKAG...
Description Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A??
Power MOSFET(Vdss=200V/ Rds(on)max=0.023ohm/ Id=98A)
Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A)
Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A?)
Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A?

File Size 97.19K  /  8 Page

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    C4D15120A

Cree, Inc
Part No. C4D15120A
OCR Text ...5 a t j =25c i f = 15 a t j =175c i r reverse current 35 120 200 300 a v r = 1200 v t j =25c v r = 1200 v t j =175c q c total capacitive charge 96 nc v r = 1200 v, i f = 15a d i /d t = 200 a/s t j = 25c c total capacitance 1...
Description Silicon Carbide Schottky Diode 1.2kV Schottky Rectifier

File Size 320.50K  /  5 Page

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    IRL3716SPBF IRL3716PBF IRL3716LPBF

International Rectifier
Part No. IRL3716SPBF IRL3716PBF IRL3716LPBF
OCR Text ...j = 25C 20s PULSE WIDTH Tj = 175c 1 0.1 1 10 100 1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.00 2...
Description SMPS MOSFET

File Size 279.92K  /  12 Page

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    IRF6720S2TR1PBF IRF6720S2TRPBF

International Rectifier
Part No. IRF6720S2TR1PBF IRF6720S2TRPBF
OCR Text ... = 25C 60s PULSE WIDTH Tj = 175c 2.5V 1 10 100 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 100 VDS = 15V 60s PULSE WIDTH Fig 5. Typ...
Description DirectFET TM Power MOSFET

File Size 230.09K  /  10 Page

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    C4D10120D

Cree, Inc
Part No. C4D10120D
OCR Text ... 5 a t j =25c i f = 5 a t j =175c i r reverse current 20 40 150 300 a v r = 1200 v t j =25c v r = 1200 v t j =175c q c total capacitive charge 34.5 nc v r = 1200 v, i f = 5a d i /d t = 200 a/s t j = 25c c total capacitance 390 2...
Description Silicon Carbide Schottky Diode 1.2kV Schottky Rectifier

File Size 611.64K  /  5 Page

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    IRLI2910

IRF[International Rectifier]
Part No. IRLI2910
OCR Text .../dt 490A/s, VDD V(BR)DSS, TJ 175c Pulse width 300s; duty cycle 2%. t=60s, =60Hz Uses IRL2910 data and test conditions IRLI2910 1000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 1000 ID , D rain-to-S ource C urr...
Description HEXFET Power MOSFET

File Size 140.03K  /  8 Page

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    IRLU9343-701 IRLR9343 IRLU9343

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRLU9343-701 IRLR9343 IRLU9343
OCR Text ... for Better THD and Lower EMI l 175c Operating Junction Temperature for Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability l Multiple Package Options l IRLR9343 IRLU9343 IRLU9343-701 Key Parameters -55 93 150 ...
Description -55V Single P-Channel HEXFET Power MOSFET in a D-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a I-Pak package
DIGITAL AUDIO MOSFET
DIODE MED-FAST BAS116 80VR 250MA 1.25VF@150MA 1.5US TO-236AB -55 150C 数字音频MOSFET

File Size 242.32K  /  10 Page

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