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  175c Datasheet PDF File

For 175c Found Datasheets File :: 15893    Search Time::1.421ms    
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    Bivar Inc.
Part No. H-175c H-176C H-177C H-178C
OCR Text ...] 0.130 [3.3mm] 0.240 [6.1mm] h-175c h-176c h-177c h-178c x 1 4 thomas, irvine, ca. 92618 .x .1 date: date: 04/18/03 04/18/03 checked: m. chen designed: .xxx .005 .xx .01 david green t-1? (5mm) led holder tel: (949) 9...
Description
File Size 79.72K  /  1 Page

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    APT30DC60HJ

Microsemi Corporation
Part No. APT30DC60HJ
OCR Text ...ard voltage i f = 30a t j = 175c 2 2.4 v t j = 25c 150 600 i rm maximum reverse leakage current v r = 600v t j = 175c 300 3000 a q c total capacitive charge i f = 30a, v r = 300v di/dt =1000a/s 42 nc f...
Description ISOTOP SiC Diode Full Bridge Power Module

File Size 66.82K  /  3 Page

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    16CTU04STRLPBF 16CTU04-1PBF 16CTU04-1TRL 16CTU04-1TRLPBF 16CTU04-1TRR 16CTU04-1TRRPBF 16CTU04SPBF 16CTU04STRL 16CTU04STR

International Rectifier, Corp.
Part No. 16CTU04STRLPBF 16CTU04-1PBF 16CTU04-1TRL 16CTU04-1TRLPBF 16CTU04-1TRR 16CTU04-1TRRPBF 16CTU04SPBF 16CTU04STRL 16CTU04STRR 16CTU04STRRPBF
OCR Text ...oltage Drop Low Leakage Current 175c Operating Junction Temperature Lead-Free ("PbF" suffix) trr = 60ns IF(AV) = 16Amp VR = 400V Description/ Applications International Rectifier's FRED.. series are the state of the art Ultra fast rec...
Description Ultrafast Rectifier 超高速整流器

File Size 287.21K  /  9 Page

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    DS1104SG27 DS1104SG30 DS1104SG DS1104SG26 DS1104SG28 DS1104SG29 DS1104SG25

Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
Part No. DS1104SG27 DS1104SG30 DS1104SG DS1104SG26 DS1104SG28 DS1104SG29 DS1104SG25
OCR Text ...= 1000A, dIrr/dt = 3A/s Tcase = 175c, VR = 100V At Tvj = 175c At Tvj = 175c Min. Max. 1.3 50 1600 85 0.67 0.31 Units V mA C A V m CURVES 2500 Measured under pulse conditions 4000 2000 Instantaneous forward current, IF - (A) 3000 M...
Description Rectifier Diode 1849 A, 2900 V, SILICON, RECTIFIER DIODE

File Size 94.85K  /  7 Page

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    IRF1018EPBF IRF1018ESLPBF IRF1018ESPBF

International Rectifier
Part No. IRF1018EPBF IRF1018ESLPBF IRF1018ESPBF
OCR Text ...dt 1668A/s, VDD V(BR)DSS, TJ 175c. Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance...
Description HEXFET Power MOSFET

File Size 426.96K  /  11 Page

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ...rofile through-hole (IRF1010EL) 175c Operating Temperature Fast Switching Fully Avalanche Rated G HEXFET(R) Power MOSFET D VDSS = 60V RDS(on) = 12m Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utiliz...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

File Size 122.02K  /  10 Page

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ...Resistance Dynamic dv/dt Rating 175c Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 12m G S ID = 84A Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanc...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text 175c Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l HEXFET(R) Power MOSFET D IRF1010NS IRF1010NL VDSS = 55V RDS(on) = 11m G S Advanced HEXFET (R) Power MOSFETs from International Rectifier util...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

File Size 144.82K  /  10 Page

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ...Resistance Dynamic dv/dt Rating 175c Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 11m G S ID = 85A Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanc...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

File Size 154.40K  /  8 Page

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    IRF1010Z IRF1010ZL IRF1010ZS

IRF[International Rectifier]
Part No. IRF1010Z IRF1010ZL IRF1010ZS
OCR Text ...hnology Ultra Low On-Resistance 175c Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G VDSS = 55V RDS(on) = 7.5m S Description Specifically designed for Automotive applications, this HEXFET(R) Power MO...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

File Size 298.51K  /  12 Page

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For 175c Found Datasheets File :: 15893    Search Time::1.421ms    
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