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20v. Datasheet PDF File

For 20v. Found Datasheets File :: 43316 Search Time::1.484ms
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				Mitsubishi Electric Corporation POWEREX[Powerex Power Semiconductors]
Part No.	FS7KM-16 FS7KM-16A
OCR Text	...RACTERISTICS (TYPICAL) 5 VGS = 20V 10V CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 20 PD = 40W VGE = 20V 10V 4.5V TC = 25C Pulse Test PD = 40W DRAIN CURRENT ID (A) 16 DRAIN CURRENT ID (A) TC = 25C Pulse Test...
Description	MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
File Size	47.52K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FS7KM-18A FS7KM-18
OCR Text	...TC = 25C Pulse Test 5 VGS = 20V TC = 25C Pulse Test VGS = 20V 10V 5V 4.5V DRAIN CURRENT ID (A) 16 PD = 40W DRAIN CURRENT ID (A) 10V 4 PD = 40W 12 5V 3 8 2 4V 4 4V 1 3.5V 0 0 10 ...
Description	HIGH-SPEED SWITCHING USE
File Size	41.74K / 4 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors] Fairchild Semiconductor
Part No.	FS7KM-18 FS7M0680TU FS7M0680YDTU FS7KM-18A
OCR Text	...TC = 25C Pulse Test 5 VGS = 20V TC = 25C Pulse Test VGS = 20V 10V 5V 4.5V DRAIN CURRENT ID (A) 16 PD = 40W DRAIN CURRENT ID (A) 10V 4 PD = 40W 12 5V 3 8 2 4V 4 4V 1 3.5V 0 0 10 ...
Description	Fairchild Power Switch(FPS) Nch POWER MOSFET HIGH-SPEED SWITCHING USE
File Size	46.69K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FS7KM-5
OCR Text	...RACTERISTICS (TYPICAL) 10 VGS = 20V 10V 7V PD = 30W TC = 25C Pulse Test CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 20 PD = 30W DRAIN CURRENT ID (A) 16 TC = 25C Pulse Test VGS = 20V 10V DRAIN CURRENT ID (A) 8 6V 6 12 ...
Description	HIGH-SPEED SWITCHING USE
File Size	44.05K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA100TS120U
OCR Text	...kage Current -- -- 250 nA VGE = 20V Dynamic Characteristics - TJ = 125C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff (1) Ets (1) Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate ...
Description	HALF-BRIDGE IGBT INT-A-PAK 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
File Size	268.82K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7807ZPBF IRF7807ZTRPBF
OCR Text	... 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 8.8A See Fig. 16 VDS = 15V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 8.8A Clamped Inductive Load e = 1.0MHz Avalanche Characteristics EAS IAR Parameter Single Pulse Ava...
Description	HEXFET Power MOSFET Control FET for Notebook Processor Power
File Size	212.64K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF9Z34NPBF
OCR Text	..., VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 35 ID = -10A 7.9 nC VDS = -44V 16 VGS = -10V, See Fig. 6 and 13 VDD = -28V ID = -10A ns RG = 13 RD = 2.6, See Fig. 10 Between lead, 6mm (0.25in.) nH G from package and center of...
Description	HEXFET? POWER MOSFET HEXFET㈢ POWER MOSFET
File Size	235.43K / 9 Page	View it Online	Download Datasheet

				eupec GmbH
Part No.	BSM200GB120DLC
OCR Text	...tot 1,3 kW VGES +/- 20V V IF 200 A IFRM 400 A VR = 0V, t p = 10ms, T Vj = 125C 2 It - kA2s RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV Charakteristische Werte / Characteristic values ...
Description	IGBT-Modules
File Size	86.51K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFB4310PBF IRFS4310PBF IRFSL4310PBF IRFS4310RPBF
OCR Text	...V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V f = 1MHz, open drain g Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Parameter Forward Tra...
Description	HEXFET㈢Power MOSFET HEXFET庐Power MOSFET HEXFET?Power MOSFET High Efficiency Synchronous Rectification in SMPS
File Size	375.93K / 12 Page	View it Online	Download Datasheet

				SamHop Microelectronics...
Part No.	STT468A
OCR Text	...t r ns t d(off) ns t f ns v ds =20v,v gs =0v switching characteristics v dd =20v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =1.1a v ds =10v , i d =1....
Description	Super high dense cell design for low RDS(ON). N-Channel Logic Level Enhancement Mode Field Effect Transistor
File Size	124.86K / 8 Page	View it Online	Download Datasheet

For 20v. Found Datasheets File :: 43316 Search Time::1.484ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |