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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
QM600HD-M
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Description |
HIGH POWER SWITCHING USE NON-INSULATED TYPE
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File Size |
58.83K /
4 Page |
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it Online |
Download Datasheet
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POWEREX[Powerex Power Semiconductors]
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Part No. |
CM600HA-5F
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Description |
Trench Gate Design Single IGBTMOD600 Amperes/250 Volts Trench Gate Design Single IGBTMOD 600 Amperes/250 Volts Trench Gate Design Single IGBTMOD⑩ 600 Amperes/250 Volts
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File Size |
51.12K /
4 Page |
View
it Online |
Download Datasheet
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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Part No. |
CM600HA-5F
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Description |
HIGH POWER SWITCHING USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
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File Size |
45.01K /
4 Page |
View
it Online |
Download Datasheet
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