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TOSHIBA
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| Part No. |
2sc2983
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| OCR Text |
2sc2983 2002-07-23 1 toshiba transistor silicon npn epitaxial type (pct process) 2sc2983 power amplifier applications driver stage amplifier applications high transition frequency: f t = 100 mhz (typ.) complementary... |
| Description |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier Applications
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| File Size |
98.08K /
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TY Semiconductor Co., Ltd
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| Part No. |
2sc2983
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| OCR Text |
...mm 1 base 2 collector 3 emitter 2sc2983 features high transiton frequency: ft=100mhz(typ.) absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo 160 v collector to emitter voltage v ceo 160 v emitter ... |
| Description |
High Transiton Frequency: Ft=100MHz(TYP.) Collector to base voltage VCBO 160 V
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| File Size |
47.37K /
1 Page |
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TOSHIBA
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| Part No. |
2SA1225 2SA1225Y
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| OCR Text |
...100 MHz (typ.) Complementary to 2sc2983 Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temper... |
| Description |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-251AA
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier Applications
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| File Size |
98.40K /
4 Page |
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it Online |
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