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HITACHI[Hitachi Semiconductor]
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| Part No. |
2sk3209
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| OCR Text |
2sk3209
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-759(Z) Target Specification 1st. Edition December 1998 Features
* Low on-resistance R DS =35m typ. * High speed switching * 4V gate drive device can be driven from 5V... |
| Description |
Silicon N Channel MOS FET High Speed Power Switching
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| File Size |
25.50K /
4 Page |
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it Online |
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hitachi
|
| Part No. |
2sk3209
|
| OCR Text |
2sk3209
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-759(Z) Target Specification, 1st. Edition Dec. 1, 1998 Features
* Low on-resistance R DS =35m typ. * High speed switching * 4V gate drive device can be driven from 5V... |
| Description |
Silicon NPN Triple Diffused
From old datasheet system
|
| File Size |
30.44K /
5 Page |
View
it Online |
Download Datasheet |
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