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				PANASONIC[Panasonic Semiconductor]
Part No.	AN8807 AN8807SB
OCR Text	...5V, f=10kHz, 100kHz -63 -200 420 -15 0.185 1.20 1.20 0.175 -3.8 0 63 200 mV mV k % 600 0 0.285 1.75 1.75 0.275 -2.3 780 15 0.385 2.30 2.30 0.375 - 0.8 dB VCR-H VCR-L VCC=5V, VTB=VREF f=10kHz VCC=5V, VTB=VREF f=10k...
Description	Three-Beam Method Head Amplifier IC for CD-ROM
File Size	89.08K / 10 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5022AVR
OCR Text	...5.21 (.205) 5.72 (.225) 10.67 (.420) 11.18 (.440) 25.15 (0.990) 26.67 (1.050) 050-5803 Rev A Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045...
Description	POWER MOS V 500V 21A 0.220 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	58.67K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5024AVR
OCR Text	...5.21 (.205) 5.72 (.225) 10.67 (.420) 11.18 (.440) 25.15 (0.990) 26.67 (1.050) 050-5802 Rev B Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045...
Description	POWER MOS V 500V 18.5A 0.240 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.55K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5030AVR
OCR Text	...5.21 (.205) 5.72 (.225) 10.67 (.420) 11.18 (.440) 25.15 (0.990) 26.67 (1.050) 050-5825 Rev A Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045...
Description	POWER MOS V 500V 14.7A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	61.48K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT50M50 APT50M50PVR
OCR Text	...6 Rev - 10.92 (.430) 10.67 (.420) 4.39 (.173) 4.14 (.163) (4 Places) 12.45 (.490) 11.94 (.470) Gate Source Sense 5.33 (.210) 4.83 (.190) 11.63 (.458) 11.13 (.438) .635 (.025) .381 (.015) Dimensions in Millimeters and (I...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 74.5A 0.050 Ohm
File Size	35.96K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8065BVFR APT10M11B2VR APT20M22B2VR APT8065
OCR Text	...0 150 17 70 12 11 60 12 3700 420 225 225 25 105 24 22 90 24 ns nC Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS...
Description	POWER MOS V 800V 13A 0.650 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	63.14K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8065BVR APT8065 APT8065AVR
OCR Text	...0 150 17 70 12 11 60 12 3700 420 225 225 25 105 24 22 90 24 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbo...
Description	POWER MOS V 800V 13A 0.650 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.69K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8065SVR
OCR Text	...0 150 17 70 12 11 60 12 3700 420 225 225 25 105 24 22 90 24 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbo...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 800V 13A 0.650 Ohm
File Size	63.31K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8065 APT8065AVR
OCR Text	...0 150 17 70 12 11 60 12 3700 420 225 225 25 105 24 22 90 24 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbo...
Description	POWER MOS V 800V 11.5A 0.650 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.68K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8067HVR
OCR Text	...0 150 17 70 12 11 60 12 3700 420 225 225 25 105 24 22 90 24 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbo...
Description	POWER MOS V 800V 11.5A 0.670 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.92K / 4 Page	View it Online	Download Datasheet

For 420 Found Datasheets File :: 23366 Search Time::1.531ms
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