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  480v Datasheet PDF File

For 480v Found Datasheets File :: 3446    Search Time::1ms    
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    50MT060ULS 50MT060ULST

IRF[International Rectifier]
Part No. 50MT060ULS 50MT060ULST
OCR Text ... 1.7 3.8 5.5 nC IC = 100A VCC = 480v VGE = 15V IC = 50A, VCC = 480v, VGE = 15V, Rg = 5 Energy losses include tail and diode reverse recovery mJ mJ IC = 50A, VCC = 480v, VGE = 15V Rg = 5, T J = 125C Energy losses include tail and ...
Description 600V UltraFast 4-20 kHz Ls Chop S IGBT in a MTP package
LOW SIDE CHOPPER IGBT MTP

File Size 197.34K  /  10 Page

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    Micross Components
Part No. ICE15N60W
OCR Text ...v/dt ruggedness 50 v/ns v ds = 480v, i d = 15a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 160 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 60 ncm m...
Description N-Channel Enhancement Mode MOSFET

File Size 752.59K  /  4 Page

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    Micross Components
Part No. ICE15N60FP
OCR Text ...v/dt ruggedness 50 v/ns v ds = 480v, i d = 15a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 35 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 50 ncm m ...
Description N-Channel Enhancement Mode MOSFET

File Size 742.65K  /  4 Page

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    Micross Components
Part No. ICE13N65
OCR Text ...v/dt ruggedness 50 v/ns v ds = 480v, i d = 13a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 160 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 60 ncm m...
Description N-Channel Enhancement Mode MOSFET

File Size 755.84K  /  4 Page

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    Micross Components
Part No. ICE13N65FP
OCR Text ...v/dt ruggedness 50 v/ns v ds = 480v, i d = 13a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 35 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 50 ncm m ...
Description N-Channel Enhancement Mode MOSFET

File Size 748.98K  /  4 Page

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    Micross Components
Part No. ICE11N70
OCR Text ...v/dt ruggedness 50 v/ns v ds = 480v, i d = 11a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 108 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 60 ncm m...
Description N-Channel Enhancement Mode MOSFET

File Size 761.67K  /  4 Page

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    Micross Components
Part No. ICE11N70FP
OCR Text ...v/dt ruggedness 50 v/ns v ds = 480v, i d = 11a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 108 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 60 ncm m...
Description N-Channel Enhancement Mode MOSFET

File Size 756.33K  /  4 Page

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    Micross Components
Part No. ICE11N65FP
OCR Text ...v/dt ruggedness 50 v/ns v ds = 480v, i d = 11a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 35 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 50 ncm m ...
Description N-Channel Enhancement Mode MOSFET

File Size 746.16K  /  4 Page

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    Micross Components
Part No. ICE10N73FP
OCR Text ...v/dt ruggedness 50 v/ns v ds = 480v, i d = 10a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 35 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 50 ncm m ...
Description N-Channel Enhancement Mode MOSFET

File Size 745.00K  /  4 Page

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    Micross Components
Part No. ICE15N65FP
OCR Text ...v/dt ruggedness 50 v/ns v ds = 480v, i d = 15a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 35 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 50 ncm m ...
Description N-Channel Enhancement Mode MOSFET

File Size 750.01K  /  4 Page

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