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1N5227B BL180 431CH W49L102Q 01N60 74670 78070AY 38001
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  512k Datasheet PDF File

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    IDT
Part No. IDT71P71104 IDT71P71204
OCR Text ...1p71804 (1m x 18-bit) 71p71604 (512k x 36-bit) advance information 18 mb ddr ii sram burst of 2 commercial temperatu...
Description 1.8V 2M x 9 DDR II Pipelined SRAM
1.8V 2M x 8 DDR II Pipelined SRAM

File Size 612.62K  /  24 Page

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    IS61LPS25636A-200B3LI IS61LPS25632A

Integrated Silicon Solution, Inc
Integrated Silicon Solution...
Part No. IS61LPS25636A-200B3LI IS61LPS25632A
OCR Text ... foating. 256k x 36, 256k x 32, 512k x 18 9 mb synchronous pipelined, single cycle deselect static ram january 2014 fast access time symbol parameter 250 200 166 units t kq clock access time 2.6 3.1 3.5 ns t kc cycl...
Description 9 Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM

File Size 532.76K  /  35 Page

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    MT48LC1M16A1S MT48LC1M16A1TGS

MICRON[Micron Technology]
Part No. MT48LC1M16A1S MT48LC1M16A1TGS
OCR Text ...w access/precharge 1 Meg x 16 - 512k x 16 x 2 banks architecture with 11 row, 8 column addresses per bank * Programmable burst lengths: 1, 2, 4, 8 or full page * Auto Precharge Mode, includes CONCURRENT AUTO PRECHARGE * Self Refresh and Ada...
Description SYNCHRONOUS DRAM

File Size 1,452.05K  /  51 Page

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    MT48LC1M16A1 MT48LC1M16A1TGSIT

MICRON[Micron Technology]
Part No. MT48LC1M16A1 MT48LC1M16A1TGSIT
OCR Text ...w access/precharge 1 Meg x 16 - 512k x 16 x 2 banks architecture with 11 row, 8 column addresses per bank * Programmable burst lengths: 1, 2, 4, 8 or full page * Auto Precharge Mode, includes CONCURRENT AUTO PRECHARGE * Self Refresh and Ada...
Description SYNCHRONOUS DRAM

File Size 1,451.81K  /  51 Page

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    MT48LC2M32B2 MT48LC2M32B2TG

Micron Technology
Part No. MT48LC2M32B2 MT48LC2M32B2TG
OCR Text ...f 1, 2, and 3 MT48LC2M32B2 - 512k x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdramds PIN ASSIGNMENT (TOP VIEW) 86-PIN TSOP VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 NC...
Description SYNCHRONOUS DRAM

File Size 1,745.14K  /  53 Page

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    CY7C1916JV18-300BZXI CY7C1916JV18-300BZC CY7C1916JV18-300BZI CY7C1916JV18-300BZXC CY7C1320JV18-300BZC CY7C1320JV18-300BZ

Cypress Semiconductor
Part No. CY7C1916JV18-300BZXI CY7C1916JV18-300BZC CY7C1916JV18-300BZI CY7C1916JV18-300BZXC CY7C1320JV18-300BZC CY7C1320JV18-300BZXC CY7C1320JV18-300BZI CY7C1320JV18-300BZXI
OCR Text ...nsity (2m x 8, 2m x 9, 1m x 18, 512k x 36) 300 mhz clock for high bandwidth 2-word burst for reducing address bus frequency double data rate (ddr) interfaces (data transferred at 600 mhz) at 300 mhz two input clocks (k and k ) for pr...
Description 18-Mbit DDR-II SRAM 2-Word Burst Architecture

File Size 407.82K  /  26 Page

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    SNC82168

SONiX Technology Company
Part No. SNC82168
OCR Text ...ram ? maximum 64k program rom ? 512k *12 shared rom for program and voice data ? readable rom code data ? 12 - voice polyphony through a high - quality speech synthesizer ? mark event supported in both wave and melody. ? individual adaptive...
Description 12-Channel MIDI/Speech Controller

File Size 119.57K  /  13 Page

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    INTEGRATED DEVICE TECHNOLOGY INC
Part No. IDT71T67902S80BG
OCR Text 512k x 18 memory configurations u u u u u supports fast access times: C 7.5ns up to 117mhz clock frequency C 8.0ns up to 100mhz clock frequency C 8.5ns up to 87mhz clock frequency u lbo input selects interleaved or linear burst mode u u u ...
Description 512k X 18 CACHE SRAM, 8 ns, PBGA119

File Size 514.50K  /  23 Page

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Part No. K6F4008S2D-FF850
OCR Text 512k x8 bit super low power and low voltage full cmos static ram the attached datasheets are provided by samsung electronics. samsung electronics co., ltd. reserve the right to change the spec ifications and products. samsung electronics ...
Description 512k X 8 STANDARD SRAM, 85 ns, PBGA48

File Size 147.33K  /  9 Page

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