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				NEC Corp. NEC[NEC]
Part No.	NE8500295-8 NE8500295-6 NE8500295-4 NE85002 NE8500200 NE8500200-RG NE8500200-WB NE8500200-WB-A
OCR Text	...95 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device ...25 C) Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Total Power Disipation(*)...
Description	2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
File Size	47.52K / 8 Page	View it Online	Download Datasheet

				Shenzhen Winsemi Microelectronics Co., Ltd
Part No.	MCK100-8
OCR Text	8 se se se se n n n n sitive sitive sitive sitive g g g g ate ate ate ate silic silic silic silic o o o o n n n n c c c c on on on on tr tr ...25 unless otherwise specified) symbol parameter v a lue units v drm /v rrm repetitive peak off - st...
Description	Silicon Controlled Rectifiers
File Size	262.35K / 5 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	CR05AS-8-ET14 CR05AS-8 CR05AS-805
OCR Text	8 Thyristor Low Power Use REJ03G0543-0100 Rev.1.00 Mar.01.2005 Features * IT (AV) : 0.5 A * VDRM : 400 V * IGT : 100 A * Non-Insulate...25 mm x 25 mm x t0.7 mm). 3. If special values of IGT are required, choose item E from those listed ...
Description	Thyristor Low Power Use
File Size	87.41K / 8 Page	View it Online	Download Datasheet

				Fujitsu Microelectronics FUJITSU[Fujitsu Media Devices Limited] Fujitsu Component Limited.
Part No.	FLC257MH-8
OCR Text	8 C-Band Power GaAs FET FEATURES * * * * * High Output Power: P1dB = 34.0dBm(Typ.) High Gain: G1dB = 8.0dB(Typ.) High PAE: add = 35%(Typ.)...25 23 21 19 12 14 16 18 20 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWE...
Description	C-Band Power GaAs FET
File Size	87.21K / 4 Page	View it Online	Download Datasheet

				Analog Devices
Part No.	ADF4360-8
OCR Text	8 FEATURES Output frequency range: 65 MHz to 400 MHz 3.0 V to 3.6 V power supply 1.8 V logic compatibility Integer-N synthesizer Programma...25 V VCP 2.5 V 1.25 V VCP 2.5 V VCP = 2.0 V mA typ mA typ mA typ mA typ A typ MHz MHz MHz min...
Description	Integrated Synthesizer and VCO
File Size	366.59K / 24 Page	View it Online	Download Datasheet

				SYNERGY MICROWAVE CORPORATION SYNERGY MICROWAVE CORPORATI...
Part No.	DCSR570-8
OCR Text	8 optimized bandwidth [ 1 of 3 ] features: ? optimized tuning frequency band ? exceptional phase noise performance ? small size, surface m...25 mhz/v (typ.) output impedance 50 ohms (nom.) harmonic suppression 27 db (typ.) frequency pulling ...
Description	VOLTAGE CONTROLLED OSCILLATOR
File Size	284.03K / 3 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EIC0910-8
OCR Text	8 UPDATED 08/21/2007 9.50-10.50GHz 8-Watt Internally Matched Power FET FEATURES * * * * * * * 9.50-10.50GHz Bandwidth Input/Output I...25 9.50 9.75 10.00 10.25 10.50 10.75 11.00 11.25 --- S11 --MAG 0.762 0.698 0.608 0.501 0.335 0.17...
Description	9.50-10.50GHz 8-Watt Internally Matched Power FET
File Size	180.35K / 4 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	EMDC-17-8-75
OCR Text	8-75 E-Series 75 Ohm Coupler 5 - 1000 MHZ Features * * * Coupling 17db Typical Surface Mount Tape and Reel Packaging available SM-12...25 25 25 23 25 25 23 Minimum -- -- -- -- -- 30 12 5 24 24 20 20 20 20 20 20 18 Maximum 1.0 1.2...
Description	E-Series 75 Ohm Coupler 5 - 1000 MHZ
File Size	64.03K / 2 Page	View it Online	Download Datasheet

				SemiWell Semiconductor
Part No.	MCR22-8
OCR Text	8 Symbol 2. Gate Sensitive Gate Silicon Controlled Rectifiers Features Repetitive Peak Off-State Voltage : 600V R.M.S On-State Cu...25 C unless otherwise noted ) Conditions VAK = VDRM or VRRM ; RGK = 1000 TC = 25 C TC = 125 C (...
Description	Sensitive Gate Silicon Controlled Rectifiers
File Size	532.82K / 5 Page	View it Online	Download Datasheet

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