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Laird Tech Smart Techno...
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Part No. |
200
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OCR Text |
... pad. consisting of a silicone/boron nitride composite, these fiberglass-reinforced pads are used when the lowest thermal resistance and highest dielectric strength are required a high-tear, cut-through and puncture-resistant product, th... |
Description |
Resistant to tears and punctures
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File Size |
199.43K /
2 Page |
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Bourns Electronic Solut...
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Part No. |
CRM2512-FT
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OCR Text |
...um 7440-05-3 17 resistor 0.3821 boron oxide 1303-86-2 4.139. 1.17 lead oxide 1317-36-8 29.5 silicon dioxide 7631-86-9 60.5 first encapsulating 0.3685 boron oxide 1303-86-2 10 1.12 lead oxide 1317-36-8 29.5 silicon dioxide 7631-86-9 60.5 ove... |
Description |
Surface Mount Chip Resistor
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File Size |
29.16K /
2 Page |
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it Online |
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Laird Tech Smart Techno...
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Part No. |
900
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OCR Text |
...& composition non-reinforced boron nitride flled flm non-reinforced boron nitride flled flm non-reinforced boron nitride flled flm color yellow yellow yellow visual thickness 0.005 (0.13 mm) 0.010 (0.25 mm) 0.020 (0.51 mm) thickness tol... |
Description |
No heatsink preheating required
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File Size |
631.41K /
1 Page |
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it Online |
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VISAY[Vishay Siliconix]
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Part No. |
84063
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OCR Text |
...oped with very small amounts of boron, arsenic, phosphorus, zinc and germanium etc. The metallisation consists of thin layers of aluminium, gold or titanium. The chips are generally bonded to the lead frame with a silver epoxy and have gold... |
Description |
From old datasheet system The Constituents of Semiconductor Components
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File Size |
545.84K /
5 Page |
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SGS Thomson Microelectronics
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Part No. |
AN900
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OCR Text |
...osphorous, arsenic (n type) and boron (p type) are the most frequently used ones. semiconductors manufacturers purchase wafers predoped with n or p impurities to an impurity level of.1 ppm (one doping atom per ten million atoms of silicon).... |
Description |
MCUS - INTRODUCTION TO SEMICONDUCTOR TECHNOLOGY
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File Size |
488.36K /
15 Page |
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it Online |
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