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For bvdss Found Datasheets File :: 12484    Search Time::1.25ms    
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    GTM
Part No. GT2531
OCR Text ...R MOSFET Description N-CH bvdss 16V N-CH RDS(ON) 58m N-CH ID 3.5A P-CH bvdss -16V N-CH RDS(ON) 125m N-CH ID -2.5A The GT2531 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient ...
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 413.24K  /  7 Page

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    FDA28N50F

Fairchild Semiconductor
Part No. FDA28N50F
OCR Text .... Units Off Characteristics bvdss bvdss TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Refe...
Description N-Channel MOSFET 500V, 28A, 0.175Ω

File Size 527.74K  /  8 Page

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    SGS Thomson Microelectronics
Part No. AN473
OCR Text ...nt device characteristics (Ron, bvdss, Capacitances, Vth , Gate-charge etc.) with the demands made and the netlist and the model parameters (average value and worst case) for the SPICE sub-circuit. 3.1 Program structure The schematic is sho...
Description A NEW APPROACH TO PARAMETER EXTRACTION FOR THE SPICE POWER MOSFET MODEL

File Size 42.97K  /  7 Page

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    Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Part No. AP03N70P 03N70P
OCR Text ...ANCEMENT MODE POWER MOSFET D bvdss 600/650/700V RDS(ON) ID 3.6 3.3A Description AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.TO-220 type provide high bl...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 80.93K  /  6 Page

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    A-POWER[Advanced Power Electronics Corp.]
Part No. AP03N70J-H AP03N70H-H
OCR Text ...ANCEMENT MODE POWER MOSFET D bvdss RDS(ON) ID 700V 4.4[ 2.5A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for AC/DC converters. The through-hole version...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 38.73K  /  4 Page

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    A-POWER[Advanced Power Electronics Corp.]
Part No. AP03N70F
OCR Text ...EMENT MODE POWER MOSFET D bvdss 600/650/700V RDS(ON) 3.6 3.3A ID G S Description AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.TO-220FM type provid...
Description N-CHANNEL ENHANCEMENT MODE

File Size 80.76K  /  6 Page

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    Advanced Power Electron...
A-POWER[Advanced Power Electronics Corp.]
Part No. AP01L60T
OCR Text ...NHANCEMENT MODE POWER MOSFET bvdss RDS(ON) ID 600V 12 160mA Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device...
Description N-CHANNEL ENHANCEMENT MODE

File Size 65.28K  /  4 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDA16N50
OCR Text ...cs Symbol Off Characteristics bvdss bvdss / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coeff...
Description 500V N-Channel MOSFET

File Size 805.20K  /  8 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDA59N25
OCR Text ...cs Symbol Off Characteristics bvdss bvdss / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd TC = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperatu...
Description 250V N-Channel MOSFET

File Size 560.67K  /  8 Page

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    FQPF95N03L

FAIRCHILD SEMICONDUCTOR CORP
Part No. FQPF95N03L
OCR Text ... Units Off Characteristics bvdss bvdss / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse...
Description TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 57A I(D) | TO-220F
30V LOGIC N-Channel MOSFET
57 A, 30 V, 0.0115 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 680.37K  /  8 Page

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