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IXYS
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| Part No. |
IXFB38N100Q2
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| OCR Text |
...transient 40 v i d25 t c = 25 c38a i dm t c = 25 c, pulse width limited by t jm 152 a i ar t c = 25 c38a e ar t c = 25 c60mj e as t c = 25 c 5.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 20 v/ns t j 150 c, r g = 2 ?... |
| Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
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| File Size |
548.88K /
4 Page |
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it Online |
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New Jersey Semi-Conduct...
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| Part No. |
C38C
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| OCR Text |
...ard blocking current* c38u c38f c38a c38g c38b c38h c38c c38d c38e peak reverse and forward blocking current* c38u c38f c38a c38g c38b c38h c38c c38d c38e rate of rise of forward voltage that will not turn on scr** gate current to fire gate... |
| Description |
C38 SERIES
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| File Size |
134.64K /
2 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STP38N06
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| OCR Text |
...nt (continuous) at t c = 25 o c38a i d drain current (continuous) at t c = 100 o c26a i dm ( ) drain current (pulsed) 152 a p tot total dissipation at t c = 25 o c90w derating factor 0.6 w/ o c dv/dt( 1 ) peak diode recovery voltage ... |
| Description |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
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| File Size |
422.63K /
11 Page |
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it Online |
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IXYS
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| Part No. |
IXFR38H100Q2
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| OCR Text |
...ed by t jm 150 a i ar t c = 25 c38a e ar t c = 25 c75mj e as t c = 25 c 4.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 20 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 416 w t j -55 ... +150 c t jm 150 c t stg -55 .... |
| Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
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| File Size |
564.41K /
5 Page |
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it Online |
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IXYS, Corp.
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| Part No. |
IXGH38N60
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| OCR Text |
... t c = 25 c76a i c90 t c = 90 c38a i cm t c = 25 c, 1 ms 152 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 w i cm = 76 a (rbsoa) clamped inductive load, l = 100 m h @ 0.8 v ces p c t c = 25 c 200 w t j -55 ... +150 c t jm 150 c t ... |
| Description |
Ultra-Low VCE(sat) IGBT(1.8V超低VCE(sat)的绝缘栅双极晶体 75 A, 600 V, N-CHANNEL IGBT, TO-247AD
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| File Size |
45.69K /
2 Page |
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it Online |
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