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  cmos ic from 128k byte ram 409 Datasheet PDF File

For cmos ic from 128k byte ram 409 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |   

    Integrated Silicon Solution, Inc.
Part No. IS61LV12816LL-12T IS61LV12816LL-12BI IS61LV12816LL-12TI IS61LV12816LL-12LQI
Description 128k x 16 HIGH-SPEED cmos STATic ram WITH 3.3V SUPPLY 128k X 16 STANDARD Sram, 12 ns, PQFP44
128k x 16 HIGH-SPEED cmos STATic ram WITH 3.3V SUPPLY 128k X 16 STANDARD Sram, 12 ns, PDSO44

File Size 104.70K  /  16 Page

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    TC58V64BDC

TOSHIBA[Toshiba Semiconductor]
Part No. TC58V64BDC
Description 64-MBIT (8M x 8 BITS) cmos NAND E PROM (8M byte SmartMedia )
64-MBIT (8M  8 BITS) cmos NAND E2PROM (8M byte SmartMediaTM)
64-MBIT (8M x 8 BITS) cmos NAND E2PROM (8M byte SmartMediaTM)

File Size 341.43K  /  33 Page

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    Macronix International Co., Ltd.
Part No. MX26C1000BTC-10 MX26C1000BMC-10 MX26C1000BPC-10 MX26C1000BMI-10 MX26C1000BPI-10 MX26C1000BTI-10 MX26C1000BQC-10 MX26C1000BTI-15 MX26C1000BPC-15 MX26C1000BPC-90 MX26C1000BQI-90 MX26C1000BMC-90 MX26C1000BMI-12
Description Toggle Switch; Circuitry:DPDT; Switch Operation:On-Off-On; Contact Current Max:12A; Leaded Process Compatible:Yes
Toggle Switch; Circuitry:SPDT; Switch Operation:On-On; Contact Current Max:12A; Leaded Process Compatible:Yes 128k X 8 FLASH 12V PROM, 150 ns, PDIP32
1M-BIT [128k x 8] cmos MULTIPLE-TIME-PROGramMABLE-EPROM 128k X 8 FLASH 12V PROM, 90 ns, PDIP32
1M-BIT [128k x 8] cmos MULTIPLE-TIME-PROGramMABLE-EPROM 128k X 8 FLASH 12V PROM, 90 ns, PQCC32
1M-BIT [128k x 8] cmos MULTIPLE-TIME-PROGramMABLE-EPROM 128k X 8 FLASH 12V PROM, 90 ns, PDSO32
1M-BIT [128k x 8] cmos MULTIPLE-TIME-PROGramMABLE-EPROM 128k X 8 FLASH 12V PROM, 120 ns, PDSO32

File Size 989.46K  /  23 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMicONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K6R3024V1D-HI12 K6R3024V1D K6R3024V1D-HC09 K6R3024V1D-HC10 K6R3024V1D-HC12 K6R3024V1D-HI09 K6R3024V1D-HI10
Description from old datasheet system
128k x 24 Bit High-Speed cmos Static ram(3.3V Operating) 128k的24位高速cmos静态ram.3V的工作)
128k X 24 MULTI DEVicE Sram MODULE, 10 ns, PBGA119

File Size 171.26K  /  9 Page

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    Integrated Silicon Solution, Inc.
Part No. IS61LV12816L-8T IS61LV12816L-10BLI IS61LV12816L-10LQLI IS61LV12816L-8BI IS61LV12816L-8TI IS61LV12816L-10TLI IS61LV12816L-8TL
Description 128k x 16 HIGH-SPEED cmos STATic ram WITH 3.3V SUPPLY 128k X 16 STANDARD Sram, 10 ns, PQFP44
128k x 16 HIGH-SPEED cmos STATic ram WITH 3.3V SUPPLY 128k X 16 STANDARD Sram, 8 ns, PBGA48
128k x 16 HIGH-SPEED cmos STATic ram WITH 3.3V SUPPLY 128k X 16 STANDARD Sram, 8 ns, PDSO44
128k x 16 HIGH-SPEED cmos STATic ram WITH 3.3V SUPPLY 128k X 16 STANDARD Sram, 10 ns, PDSO44

File Size 108.43K  /  16 Page

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    White Electronic Designs
Part No. WME128k8-120DEI WME128k8-140DEI WME128k8-140DEIA WME128k8-250DEI WME128k8-250DEIA WME128k8-300DEI WME128k8-300DEIA WME128k8-200DEIA WME128k8-150DEIA WME128k8-120DEIA WME128k8-250DEQA WME128k8-150DEQA WME128k8-120DEQA WME128k8-150CQA WME128k8-250CQA
Description 120ns; 5.5V power supply; 128k x 8 cmos monolithic EEPROM, SMD 5962-96796
140ns; 5.5V power supply; 128k x 8 cmos monolithic EEPROM, SMD 5962-96796
250ns; 5.5V power supply; 128k x 8 cmos monolithic EEPROM, SMD 5962-96796
300ns; 5.5V power supply; 128k x 8 cmos monolithic EEPROM, SMD 5962-96796
200ns; 5.5V power supply; 128k x 8 cmos monolithic EEPROM, SMD 5962-96796
150ns; 5.5V power supply; 128k x 8 cmos monolithic EEPROM, SMD 5962-96796

File Size 160.35K  /  11 Page

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    Macronix International Co., Ltd.
Part No. MX27C1000PI-70 MX27C1000QI-70 MX27C1000MI-55 MX27C1000TI-70 MX27C1000TI-55 MX27C1000TI-15 MX27C1000MI-90 MX27C1000QI-12
Description Single Output LDO, 3.0A, Fixed(1.8V), Fast Transient Response, Low Quiescent Current 5-TO-220 -40 to 125
Single Output LDO, 3.0A, Fixed(2.5V), Fast Transient Response, Low Quiescent Current 5-TO-220 -40 to 125
FPGA - 200000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN 128k X 8 OTPROM, 90 ns, PDSO32
1M-BIT [128k x 8] cmos EPROM 128k X 8 OTPROM, 70 ns, PQCC32
1M-BIT [128k x 8] cmos EPROM 128k X 8 OTPROM, 120 ns, PQCC32

File Size 946.29K  /  18 Page

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    Winbond Electronics Corp
Winbond Electronics, Corp.
Part No. W29EE011P-90 W29EE011P-15 W29EE011T-15
Description Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Color:Black; Cable/Wire MIL SPEC:MIL-W-16878/1 Type B; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
KJA SERIES III
128k X 8 cmos FLASH MEMORY 128k X 8 FLASH 5V PROM, 90 ns, PQCC32
128k X 8 cmos FLASH MEMORY 128k的8的cmos闪存

File Size 184.71K  /  20 Page

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    http://
Macronix International Co., Ltd.
Part No. MX28F1000PRI-70 MX28F1000PQI-70 MX28F1000PRC-90C4 MX28F1000PRC-12C4 MX28F1000PTC-12C4 MX28F1000PQC-12C4 MX28F1000PTI-90 MX28F1000PRI-90 MX28F1000PPI-70 MX28F1000PRC-70C4
Description 1M-BIT [128k x 8] cmos FLASH MEMORY 128k X 8 FLASH 12V PROM, 70 ns, PDIP32
1M-BIT [128k x 8] cmos FLASH MEMORY 128k X 8 FLASH 12V PROM, 90 ns, PDSO32

File Size 130.92K  /  33 Page

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    Atmel
Part No. ATTINY13
Description 1-Kbyte In-System programmable Flash Program Memory, 64-byte Sram, 64-byte EEPROM, 32-byte Register File, 4-channel 10-bit A/D, Up to 16 MIPS throughput at 16 MHz, 5 Volts. 1.8 - 5.5 Volt Operation.

File Size 172.71K  /  15 Page

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