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...ductors bsp60; bsp61; bsp62 pnp darlington transistors handbook, halfpage m3d087
1999 apr 29 2 philips semiconductors product speci?cation pnp darlington transistors bsp60; bsp61; bsp62 features high current (max. 0.5 a) low voltage (ma... |
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63.13K /
8 Page |
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darlington transistor arrays slrs023b december 1976 revised september 1995 copyright ? 1995, texas instruments incorporated 31 post office box 655303 ? dallas, texas 75265 high-voltage high-current darlington transistor arrays ?... |
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159.06K /
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New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conduct...
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MPSU95
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...0 mps-u95 (silicon) pnp silicon darlington amplifier transistor . . . designed for amplifier and driver applications. ? high dc current gain ? hpc = 25 000 (min 15.000 (min) ? collector emitter break bvces - 40 vdc (m ? low collector-emitte... |
| Description |
PNP SILICON darlington AMPLIFIER TRANSISTOR PNP SILICON darlington AMPLIFIER TRANSISTOR
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78.38K /
2 Page |
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New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conduct...
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MPSU45
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...fax: (973) 376-8960 npn silicon darlington amplifier transistor . . . designed for amplifier and driver applications, ? high dc current gain - hfe - 25,000 (mini @ tc = 200 madc 15,000 (min) @ ic - 500 madc ? collector-emitter breakdown vol... |
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NPN SILICON darlington AMPLIFIER TRANSISTOR NPN SILICON darlington AMPLIFIER TRANSISTOR
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81.00K /
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...w64c, bdw64 d pnp silicon power darlington s 2 august 1978 - revised march 199 7 product information notes: 5. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2% . 6. these parameters must be measure... |
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146.40K /
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| OCR Text |
...w64c, bdw64 d pnp silicon power darlington s 2 august 1978 - revised march 199 7 product information notes: 5. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2% . 6. these parameters must be measure... |
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| File Size |
146.68K /
6 Page |
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