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fets Datasheet PDF File

For fets Found Datasheets File :: 6784 Search Time::2.5ms
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				ON Semiconductor
Part No.	BF721T1 BF721T1_D ON0211
OCR Text	...rola, Inc. 1998 Transistors, fets and Diodes Device Data 1 BF721T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (VCE = -25 mAdc...
Description	From old datasheet system PNP SILICON TRANSISTOR SURFACE MOUNT
File Size	104.33K / 6 Page	View it Online	Download Datasheet

				ON Semi
Part No.	BSP16T1_D ON0219
OCR Text	...rola, Inc. 1997 Transistors, fets and Diodes Device Data 1 BSP16T1 ELECTRICAL CHARACTERISTICS (continued) (TA = 25C unless otherwise noted) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (VCE = - 10 Vd...
Description	SOT-223 PACKAGE NPN SILICON From old datasheet system
File Size	97.97K / 6 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SK2383
OCR Text	fets 2SK2383 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 15.50.5 4.5 3.20.1 10.0 3.00.3 s Applications...
Description	Silicon N-Channel Power F-MOS FET
File Size	42.68K / 3 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ON Semiconductor Motorola Inc
Part No.	M1MA141KT1 ON0324 M1MA142KT1 M1MA141KT1_D
OCR Text	...orola Small-Signal Transistors, fets and Diodes Device Data (c) Motorola, Inc. 1996 1 M1MA141KT1 M1MA142KT1 RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE tr tp IF t RL 10% Irr = 0.1 IR 90% VR tp = 2 s tr = 0.35 ns IF = 10 mA VR ...
Description	From old datasheet system SC-70/SOT-323 PACKAGE SINGLE SILICON SWITCHING DIODE 40/80 V-100 mA SURFACE MOUNT
File Size	93.58K / 6 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FSGYC260D1 FSGYC260R FSGYC260R3 FSGYC260R4 FN4851
OCR Text	...wer Subsystems. Star*Power Gold fets combine this electrical capability with total dose radiation hardness up to 100K RADs while maintaining the guaranteed performance for SEE (Single Event Effects) which the Intersil FS families have alway...
Description	From old datasheet system Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Radiation Hardened/ SEGR Resistant N-Channel Power MOSFET
File Size	81.00K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	MC34GD3000EP
OCR Text	...e gate charge to the high- side fets. the ic interfaces to a mcu via six direct input control signals, an spi port for device setup and asynchronous reset, enable and interrupt signals. both 5.0 v and 3.3 v logic level inputs are accept e...
Description	Three phase field effect transistor pre-driver
File Size	696.19K / 50 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	MC33GD3000EP
OCR Text	... gate charg e to the high- side fets. the ic interfaces to a mcu via si x direct input control signals , an spi port for device setup and asynchronous reset, enable and interrupt signa ls. both 5.0 v and 3.0 v logic level inputs are acc...
Description	Three phase field effect transistor pre-driver
File Size	768.78K / 50 Page	View it Online	Download Datasheet

For fets Found Datasheets File :: 6784 Search Time::2.5ms
Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |