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goldmos Datasheet PDF File

For goldmos Found Datasheets File :: 158 Search Time::0.969ms
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				INFINEON[Infineon Technologies AG]
Part No.	PTF181301 PTF181301A
OCR Text	... is a 130 W, internally matched goldmos FET intended for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features * * Broadband internal matching Typical...
Description	LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦，1805年至1880年兆 LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
File Size	63.03K / 4 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10053
OCR Text	goldmos (R) Field Effect Transistor Description The PTF 10053 is a 12-watt goldmos FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full...
Description	12 Watts/ 2.0 GHz goldmos Field Effect Transistor 12 Watts, 2.0 GHz goldmos Field Effect Transistor
File Size	79.85K / 6 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTF210101M
OCR Text	...210101M is an unmatched 10-watt goldmos (R) FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint. PTF210101M ...
Description	High Power RF LDMOS Field Effect Transistor 10 W, 2110 ?2170 MHz
File Size	267.64K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTF180101M
OCR Text	...180101M is an unmatched 10-watt goldmos (R) FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint. PTF180101M Packag...
Description	High Power RF LDMOS Field Effect Transistor 10 W, 1.0 鈥?2.0 GHz
File Size	299.94K / 8 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTF10161
OCR Text	goldmos (R) Field Effect Transistor Description The PTF 10161 is an internally matched,165 watt goldmos FET intended for large signal amplifier applications from 869 to 894 MHz. It typically operates with 50% efficiency and 16 db of gain....
Description	165 Watts, 869-894 MHz goldmos Field Effect Transistor
File Size	286.01K / 7 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10065
OCR Text	goldmos (R) Field Effect Transistor Description The PTF 10065 is a 30-watt goldmos FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metalli...
Description	30 Watts/ 1.93-1.99 GHz goldmos Field Effect Transistor 30 Watts, 1.93-1.99 GHz goldmos Field Effect Transistor 30 Watts, 1.93.99 GHz goldmos Field Effect Transistor
File Size	92.96K / 6 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	PTF191601 PTF191601E
OCR Text	... is a 160 W, internally matched goldmos FET intended for GSM and EDGE applications in the 1930 to 1990 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features * * Broadband internal matching Typical...
Description	LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz
File Size	57.91K / 4 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTF10136
OCR Text	goldmos Field Effect Transistor Description The PTF 10136 is a 6-watt goldmos FET intended for large signal amplifier applications from to 1.0 GHz. It operates at 57% efficiency with 19 dB typical gain. Nitride surface passivation and ful...
Description	6 Watts/ 1.0 GHz goldmos Field Effect Transistor 6 Watts, 1.0 GHz goldmos Field Effect Transistor
File Size	204.18K / 7 Page	View it Online	Download Datasheet

For goldmos Found Datasheets File :: 158 Search Time::0.969ms
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