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				HITACHI[Hitachi Semiconductor]
Part No.	2SB1026
OCR Text	...ns I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -100 V, IE = 0 VCE = -5 V, IC = -150 mA VCE = -5 V, I C = -500 mA (Pulse test) V V MHz pF I C = -500 mA, I B = -50 mA (Pulse test) VCE = -5 V, IC = -150 mA VCE = -5 ...
Description	Silicon PNP Epitaxial
File Size	24.16K / 5 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SB1027
OCR Text	...V A Test conditions I C = -1 mA, IE = 0 I C = -10 mA, RBE = I E = -1 mA, IC = 0 VCB = -160 V, IE = 0 VCE = -5 V, IC = -0.15 A, pulse VCE = -5 V, IC = -0.5 A, pulse V V I C = -0.5 A, IB = -50 mA, Pulse VCE = -5 V, IC = -0.15 A, pul...
Description	Silicon PNP Transistor Silicon PNP Epitaxial
File Size	29.73K / 6 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SB1028
OCR Text	...V A Test conditions I C = -1 mA, IE = 0 I C = -10 mA, RBE = I E = -1 mA, IC = 0 VCB = -160 V, IE = 0 VCE = -5 V, IC = -0.15 A, pulse VCE = -5 V, IC = -0.5 A, pulse V V I C = -0.5 A, IB = -50 mA, Pulse VCE = -5 V, IC = -0.15 A, pul...
Description	Silicon PNP Epitaxial
File Size	30.14K / 6 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SB1032 2SB1032K
OCR Text	...V A A Test conditions I C = -25 mA, RBE = I E = -200 mA, IC = 0 VCB = -120 V, IE = 0 VCE = -100 V, RBE = VCE = -3 V, IC = -5 A1 I C = -5 A, IB = -10 mA1 I C = -10 A, IB = -0.1 A1 I C = -5 A, IB = -10 mA1 I C = -10 A, IB = -0.1 A*1 I D...
Description	Silicon PNP Triple Diffused
File Size	35.68K / 6 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SB1036
OCR Text	...1 2 3 1.27 1.27 V V mA mA mW C C 1:Emitter 2:Collector 3:Base 2.540.15 EIAJ:SC-72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter volta...
Description	Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification)
File Size	36.41K / 2 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SB1048
OCR Text	...ns I C = -10 A, IE = 0 I C = -1 mA, RBE = VCB = -60 V, IE = 0 VEB = -7 V, IE = 0 VCE = -3 V, IC = -500 mA1 I C = -500 mA, IB = -1 mA1 I C = -500 mA, IB = -1 mA*1 2 2SB1048 Area of Safe Operation Maximum Collector Dissipation Curve...
Description	Silicon PNP Epitaxial/ Darlington Silicon PNP Epitaxial, Darlington
File Size	31.00K / 6 Page	View it Online	Download Datasheet

				KEC(Korea Electronics)
Part No.	SMCB36
OCR Text	...rrm v rrm =rated, tj=25 - - 0.1 ma v rrm =rated, tj=100 - - 10 ma total capacitance c t v r =4v, f=1mhz - - 250 pf thermal resistance r th(j-1) junction to lead - - 10 /w r th(j-a) junction to ambient - - 50 /w semiconductor technical data ...
Description	SCHOTTKY BARRIER TYPE DIODE
File Size	433.69K / 2 Page	View it Online	Download Datasheet

				Solid States Devices, Inc
Part No.	SDR6004
OCR Text	... 1 3 10 50 - 10 - a ma ma ma reverse recovery time ( i f = 0.5a, i r = 1a, i rr = 0.25a, t a = 25oc) t rr ?? 60 100 nsec junction capacitance (v r = 10v dc , t a = 25oc, f = 1mhz) c j ?? 160 240 pf ...
Description	Ultrafast Rectifier
File Size	139.74K / 3 Page	View it Online	Download Datasheet

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