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					PHILIPS[Philips Semiconductors]
Part No.	SAA2521 SAA2521GP
Description	masking threshold processor for MPEG layer 1 audio compression applications
File Size	98.79K / 28 Page	View it Online	Download Datasheet

					NXP Semiconductors
Part No.	SAA2521GP
Description	masking threshold processor for MPEG layer 1 audio compression applications
File Size	104.31K / 28 Page	View it Online	Download Datasheet

					List of Unclassifed Manufac... ETC[ETC] List of Unclassifed Manufacturers Electronic Theatre Controls, Inc. List of Unclassifed Man...
Part No.	CL-155 CL-170 CL-150 CL-195 CL-201 CL-501 CL-165 CL-190 CL-191 CL-196 CL-197 CL-221 CL-260 CL-265 CL-270 CL-280 CL-321 CL-375 CL-420 CL-430S CL-431S CL-432S CL-433S CL-451 CL-460S CL-470S CL-480S CL-170DCDTU CL-170DXD CL-170DXDTD CL-170DXTS CL-170DXTU CL-155YCDT CL-155YGX CL-155YGXDT CL-155YGXDTU CL-170DC CL-170DCD CL-170DCDT CL-170DCDTD CL-170DCDTS CL-170DCT CL-170DCTD CL-170DCTS CL-170DCTU CL-170DX CL-170DXDT CL-170DXDTS CL-170DXDTU CL-170DXT CL-170DXTD CL-155YGC CL-155YGCD CL-155YGCDT CL-155YGCDTD CL-155YGCDTS CL-155YGCDTU CL-155YGCT CL-155YGCTD CL-155YGCTS CL-155YGCTU CL-155YGXD CL-155YGXDTD CL-155YGXDTS CL-155YGXT CL-155YGXTD CL-155YGXTS CL-155YGXTU CL-191YXTU CL-150DC CL-150DCD CL-150DCDT CL-150DCDTD CL-150DCDTS CL-150DCDTU CL-150DCT CL-150DCTD CL-150DCTS CL-150DCTU CL-150DX CL-150DXD CL-150DXDT CL-150DXDTD CL-150DXDTS CL-150DXDTU CL-150DXT CL-150DXTD CL-150DXTS CL-150DXTU CL-150FGC CL-150FGCD CL-150FGCDT CL-150FGCDTD CL-150FGCDTS CL-150FGCDTU CL-150FGCT CL-150FGCTD CL-150FGCTS CL-150FGCTU CL-150FGX CL-150FGXD CL-150FGXDT CL-150FGXDTD CL-150FGXDTS CL-150FGXDTU CL-150FGXT CL-150FGXTD CL-150FGXTS CL-150FGXTU CL-150GC CL-150GCD CL-150GCDT CL-150GCDTD CL-150GCDTS CL-150GCDTU CL-1
Description	masking TAPE 96MM X 55M (BULK) 小芯用于各种电子产品的使用LED 2mm Pin Strip Headers 60P STRT SOLDER TAIL 小芯用于各种电子产品的使用LED ULTRA - SMALL CHIP - LEDS FOR USE IN VARIOUS ELECTRONIC PRODUCTS 小芯用于各种电子产品的使用LED SCOTCH-WELD EPOXY ADHESIVE GREEN B/A, 2 OZ KIT ULTRA SMALL CHIP LEDS FOR USE IN VARIOUS ELECTRONIC PRODUCTS 超小型芯片LED用于各种电子产品的使 ULTRA - SMALL CHIP - LEDS FOR USE IN VARIOUS ELECTRONIC PRODUCTS
File Size	348.06K / 8 Page	View it Online	Download Datasheet

					Motorola Mobility Holdings, Inc. Microsemi, Corp. MICROSEMI[Microsemi Corporation]
Part No.	1N1673 1N1660 1N2054 1N3270 1N3271 1N3272 1N3273 1N3274 1N1675 1N2064 1N2065 1N2058 1N2068 1N2055 1N2056 1N2057 1N2066 1N2067 1NB327B1 1N2061 1N1664 1N3268 1N2060 1N1671 1N1661 1N1662 1N1663 1N1665 1N1666 1N2059 1N2063 1N2062 1N3740 1N3741 1N3742 1N3743 1N3744 1N4056 1N1670 1N1672 1N1674 1N1676 1N3260 1N3261 1N3262 1N3263 1N3264 1N3265 1N3266 1N3267 1N3269 1N3735 1N3737 1N3738 1N3739 1N4044 1N4045 1N4046 1N4047 1N4048 1N4049 1N4050 1N4051 1N4052 1N4053 1N4054 1N4055 1N3736 1N3740R 1N3260R 1N2054R 1N2055R 1N2056R 1N2057R 1N2058R 1N2059R 1N4047R 1N3272R 1N3735R 1N3742R 1N3736R 1N3739R 1N3743R 1N4048R 1N3273R 1N4044R 1N4056R 1N4052R 1N3737R 1N2067R 1N3267R 1N4045R 1N3265R 1N2060R 1N3270R 1N2063R 1N4050R 1N3268R 1N4046R 1N3738R 1N3744R 1N2064R 1N3263R 1N4049R 1N4054R 1N4051R 1N2065R 1N2068R 1N2062R 1N3266R 1N2066R 1N3271R 1N3741R 1N3262R 1N4055R
Description	SILICON POWER RECTIFIER Standard Rectifier (trr more than 500ns) 标准整流器（花环率超00ns的） Round Conductor Flat Cable, 2049/26 30 AWG, .025 (0.64) 275 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AB CLOTH CLEANING HI-PERF BLUE 275 A, 500 V, SILICON, RECTIFIER DIODE, DO-205AB CABLE 100 COND .025 FLAT 100FT Round Conductor Flat Cable, 2049/100 30 AWG, .025 (0.64) Round Conductor Flat Cable, 2049/36 30 AWG, .025 (0.64) Round Conductor Flat Cable, 2049/34 30 AWG, .025 (0.64) Round Conductor Flat Cable, 2049/20 30 AWG, .025 (0.64) Round Conductor Flat Cable, 2049/40 30 AWG, .025 (0.64) masking Tape; Tape Backing Material:Crepe Paper; Width:1"; Roll Length:60yard; Adhesive Material:Rubber; Leaded Process Compatible:No; Pack Quantity:1 RoHS Compliant: Yes 275 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AB
File Size	130.91K / 2 Page	View it Online	Download Datasheet

					意法半导 EEPROM STMicroelectronics N.V.
Part No.	M24C08-W M24C08-R M24C08-WMN6 M24C08-WMN6TP M24C04WMN1T M24C04WMN3T M24C04WMN6T M24C02-WMN3_S M24C02-WMN3G_S M24C02-WMN3P M24C02-WMN3P_S M24C02-WMN3T_S M24C02-WMN3TG_S M24C02-WMN6_W M24C04-WMN6 M24C04-LBN6T M24C04-LBN3T M24C02 M24C01 M24C08 M24C04-LMN3T M24C04-LMN6T M24C08-RBN6 M24C08-RBN3/W M24C08-RBN6/W M24C08-RBN6T M24C08-RBN3P M24C08-RBN3T M24C08-RBN6G M24C08-RBN6/S M24C08-RBN3/S M24C08-RBN3G M24C08-RBN6P M24C16-DW6T M24C16-DW3T M24C16-SDW6T M24C16-SDW3T M24C16-SDS3T M24C16-SDS6T M24C04-WBN6TP/W M24C08-MN6T M24C08-MN3T M24C02-WBN6T/W M24C04-RMN3T/W M24C04-RBN6TP/W M24C04-WBN6TP/S M24C08-WDS3 M24C08-WDS3G M24C08-WDS6 M24C08-WMN6TP/W M24C08-WDW6P M24C04-RMN6TP/S M24C08-WDS6G M24C08-WDS6P M24C08-WDW6G M24C08-WDW3 M24C08-RBN6T/W M24C08-WDW3P M24C08-WDS3/W M24C04-RMN3TP/S M24C08-WDW3G M24C08-WDS3/S M24C01-RBN6TP/W M24C08-WDS3P M24C01-WMN3TP/S M24C01-WDW6TP/S M24C01-WMN6TP/S M24C01-RBN3TP/S M24C04-RBN6T/W M24C04-RDS3G M24C04-WBN6T/W M24C04-RDS6P M24C04-RDW3 M24C04-RDW6 M24C04-WMN6TP/W M24C04-RDS6T M24C04-RDS3T M24C04-RDS6G M24C02-WMN3/S M24C02-WMN6/W M24C08-WBN3G/S M24C16-WBN3G/S M24C16-RBN3G/S M24C01-RBN3G/S M24C01-WBN3G/S M24C02-RBN3G/S M24C02-WBN3G/S M24C04-RBN3G/S M24C04-WBN3G/S
Description	16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM Microprocessor Crystal; Frequency:22.1184MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes Microprocessor Crystal; Frequency:48MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes CRYSTAL 9.84375MHZ 10PF SMD UHF power transistor NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; G_UM: 7 dB; G_UM @ f1: 7 dB; I_C: 250 mA; P_tot: 250 mW; Polarity: NPN ; VCEO max: 8 V CRYSTALS 20/0.035 -40 85 12.5P 32.768KHZ 3.2X1.5X0.8MM 2 PAD MMIC variable gain amplifier AB 3C 3#12 SKT RECP Microprocessor Crystal; Frequency:8.192MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:8MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz, with voltage regulator Schottky barrier double diodes - C_d max.: 100@VR=4V pF; Configuration: dual c.a. ; I_F: 1 A; I_FSM max: 10 A; I_R max: 1@VR=25V mA; V_Fmax: 450@IF=1A mV; V_R: 25 V XTL, OSC, 50.000 MHZ, 100PPM Microprocessor Crystal; Frequency:27MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes Schottky barrier diode - C_d max.: 10@VR=1V pF; Configuration: single ; I_F max: 200 mA; I_FSM max: 300 A; I_R max: 2.3@VR=25VA; V_Fmax: 400@IF=10mA mV; V_R max: 30 V CONNECTOR ACCESSORY PNP/PNP matched double transistors IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,SIP AB 17C 17#16 PIN RECP 45 V, 100 mA NPN general-purpose transistors NPN/PNP general purpose transistor - Description: Matched Pair IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,M:ML043MW015 CRYSTAL 4.897MHZ 20PF SMD Thyristors - I_GT: 32 mA; I_T (R_MS): 20 A; V_DRM: 650 V Thyristors - I_GT: 32 mA; I_T (R_MS): 20 A; V_DRM: 800 V POT 200 OHM 3/4 RECT CERM MT Thyristors logic level for RCD/GFI/LCCB applications - I_GT: 0.2 (min 0.02) mA; I_T (R_MS): 0.8 A; V_DRM: 500 V Thyristors logic level for RCD/GFI/LCCB applications - I_GT: 0.2 (min 0.02) mA; I_T (R_MS): 0.8 A; V_DRM: 600 V Microprocessor Crystal; Frequency:50MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:6MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:5MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:50ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes PowerMOS transistor Logic level TOPFET - @ V_IS: 5 V; I_D: 15 A; Number of pins: 3 ; R_DS(on): 0.125 mOhm; V_DSmax: 50 V Solder masking Agent; Dispensing Method:Jar; Features:For Lead-Free Applications; Used w/Tin/Lead Solders; Provides Short-Term High-Temp. Protection; Leaded Process Compatible:Yes; Volume:1gallon (US) RoHS Compliant: Yes CRYSTAL 6.7458MHZ 20PF SMD Microprocessor Crystal; Frequency:3.579545MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:180ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes RES ARRAY 24 OHM 8TRM 4RES SMD SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 15kV/us; Package: SOIC-W; No of Pins: 8; Container: Box NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 14 mA; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22.1@f1 dB; Ptot: 300 High-speed switching diodes - Cd max.: 1.5 pF; Configuration: quad c.c./c.c. ; IF max: 250 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V Low-leakage diode - Cd max.: 2 pF; Configuration: single ; IF max: 200 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA mV; VR max: 75 V Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V NPN 7GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 100 mA; fT: 7 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 150 mA; Ptot: 1000 mW; Polarity: NPN ; VCE: 10 V; VThyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual series ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V Thyristors logic level - IGT: 0.2 mA; IT (RMS): 8 A; VDRM: 500 V Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V Schottky barrier diode - Cd max.: 90@VR=0V pF; Configuration: single ; IF: 0.5 A; IFSM max: 2 A; IR max: 0.1@VR=35V mA; VFmax: 550@IF=0.5A mV; VR: 40 V AB 4C 4#12 PIN PLUG Single 12 bits ADC, up to 40 MHz, 55 MHz or 70 MHz Silicon PIN diode NPN 14 GHz wideband transistor PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V HDWR PLATE SER 3 FRNT MNT BLK OSCILLATORS 50PPM 0 70 3.3V 4 33.000MHZ TS 5X7MM 4PAD SMD Thyristors; logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 1.0 A; VDRM: 600 V Thyristor logic level - IGT: 0.05 mA; IT (RMS): 0.8 A; VDRM: 400 V; VRRM: 400 V Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 200 V Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 400 V 16KbitKbitKbitKbit1Kbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM 8-Pin SOIC High Speed - 10 MBit/s Logic Gate Output Optocoupler 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS HDWR SPACER REAR MNT SER 3 BLK 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS AB 7C 7#12 PIN PLUG 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM RECTIFIER SBR DUAL 40A 40V 280A-ifsm 530mV-vf 0.5mA-ir ITO-220AB 50/TUBE 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
File Size	144.80K / 25 Page	View it Online	Download Datasheet

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