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				AD[Analog Devices] Analog Devices, Inc.
Part No.	AD22103 AD22103K AD22103KCHIPS AD22103KR AD22103KT AD22103KRZ-RL
OCR Text	...OCESSOR A/D INTERFACE ISSUES Medium Aluminum Block Moving Air** Without Heat Sink Still Air Without Heat Sink JA (C/Watt) 60 75 190 ...high speed charge dump glitches seen at many microprocessor ADC inputs (see Figure 1). An 8-bit ADC ...
Description	Voltage Output 3.3 V Temperature Sensor withSignal Conditioning 3.3 V Supply Voltage Output Temperature Sensor with Signal Conditioning 3.3 V Supply, Voltage Output Temperature Sensor with Signal Conditioning ANALOG TEMP SENSOR-VOLTAGE, 0.95V, RECTANGULAR, SURFACE MOUNT SOIC-8 3.3 V Supply/ Voltage Output Temperature Sensor with Signal Conditioning
File Size	219.42K / 6 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	AN246
OCR Text	... cable or printed circuit trace medium and will be regarded as equivalent for electrical purposes, though their construction varies in real ...high state, and ABT(16), ALVT, and LVT(16) BiCMOS families have considerably stronger drive than the...
Description	Transmission lines and terminations with Philips Advanced Logic families
File Size	212.58K / 13 Page	View it Online	Download Datasheet

				http:// PANASONIC[Panasonic Semiconductor] Panasonic Corporation
Part No.	AN7353S
OCR Text	...* characteristics and gain) in medium and high frequency band by DC control Volume for total gain adjustment built-in (11dB) With pin for low frequency band boost Drive circuit for current output built-in 0.10.1 1.27 0.3 7.20.3...
Description	Record Equalizer Amp. for Stereo Cassette Deck
File Size	45.28K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-21170
OCR Text	...esigned for use in low noise or medium power amplifier applications in the 0.5-6 GHz frequency range. This GaAs FET device has a nominal 0.3...high performance gallium arsenide Schottkybarrier-gate field effect transistor Electrical Specifi...
Description	0.5-6 GHz Low Noise Gallium Arsenide FET
File Size	41.90K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-44101
OCR Text	Medium Power Gallium Arsenide FET Technical Data ATF-44101 Features * High Output Power: 32.0 dBm Typical P 1 dB at 4 GHz * High Gain at 1 dB Compression: 8.5 dB Typical G 1 dB at 4 GHz * High Power Efficiency: 35% Typical at 4 GHz * H...
Description	2-8 GHz Medium Power Gallium Arsenide FET
File Size	60.35K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-45101
OCR Text	Medium Power Gallium Arsenide FET Technical Data ATF-45101 Features * High Output Power: 29.0 dBm Typical P 1 dB at 4 GHz * High Gain at 1dB Compression: 10.0 dB Typical G 1 dB at 4 GHz * High Power Efficiency: 38% Typical at 4 GHz * H...
Description	2-8 GHz Medium Power Gallium Arsenide FET
File Size	40.00K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-45171
OCR Text	Medium Power Gallium Arsenide FET Technical Data ATF-45171 Features * High Output Power: 29.0 dBm Typical P 1 dB at 4 GHz * High Gain at 1dB Compression: 10.5 dB Typical G1 dB at 4 GHz * High Power Efficiency: 38% Typical at 4 GHz * He...
Description	2-8 GHz Medium Power Gallium Arsenide FET
File Size	39.13K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-46101
OCR Text	Medium Power Gallium Arsenide FET Technical Data ATF-46101 Features * High Output Power: 27.0 dBm Typical P 1 dB at 4 GHz * High Gain at 1 dB Compression: 12.0 dB Typical G 1 dB at 4 GHz * High Power Efficiency: 38% Typical at 4 GHz ...
Description	2-10 GHz Medium Power Gallium Arsenide FET
File Size	40.16K / 3 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-46171
OCR Text	Medium Power Gallium Arsenide FET Technical Data ATF-46171 Features * High Output Power: 27.0 dBm Typical P 1 dB at 4 GHz * High Gain at 1 dB Compression: 11.0 dB Typical G 1 dB at 4 GHz * High Power Efficiency: 38% Typical at 4 GHz * ...
Description	2-10 GHz Medium Power Gallium Arsenide FET(2-10 GHz 中等功率砷化FET)
File Size	39.26K / 3 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
Part No.	BAT14-020D BAT14-050D BAT14-090D BAT14-110D BAT14-D Q62702-D1259 Q62702-D1276 Q62702-D1268 Q62702-D1285 Q62702-D3450 SIEMENSAG-Q62702-D3450
OCR Text	Medium barrier ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 14-020 D BAT 14-050 D BAT 14-090 D BAT 14-110 D Maximum Ratings Parameter Symbol Values BAT 14-020 D BAT 14-050 D Reverse voltage Forwar...
Description	Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier) Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) 硅肖特基二极管（梁式引线技术方面的高性能低中等障碍）
File Size	15.71K / 2 Page	View it Online	Download Datasheet

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