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    STGB3NB60SD STGB3NB60SDT4

ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
Part No. STGB3NB60SD STGB3NB60SDT4
Description N-CHANNEL 3A - 600V D2PAK Power meshigbt N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
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