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  metal-oxide Datasheet PDF File

For metal-oxide Found Datasheets File :: 2561    Search Time::1.859ms    
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    LLE18300X LLE18300NBSP LLE18300

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. LLE18300X LLE18300NBSP LLE18300
OCR Text ...nsistor in an SOT437A glued cap metal ceramic flange package, with emitter connected to flange. Fig.1 Simplified outline and symbol. W...oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handl...
Description NPN microwave power transistor

File Size 84.53K  /  12 Page

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    M66009FP M66009E

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M66009FP M66009E
OCR Text ...ilicon gate CMOS (complementary metal oxide semiconductor) integrated circuit converts 8-bit data from serial to parallel and vice versa. This IC has 5 address setting bits, which enable users to set a distinctive address. This IC offers a ...
Description From old datasheet system
8BIT I/O EXPANDER WITH 5BIT ADDRESS
8-BIT I/O EXPANDER WITH 5-BIT ADDRESS

File Size 72.01K  /  8 Page

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    MBR340RL MBR340 MBR340-D

ONSEMI[ON Semiconductor]
Part No. MBR340RL MBR340 MBR340-D
OCR Text metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, a...
Description SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 40 VOLTS
Axial Lead Rectifier

File Size 59.04K  /  4 Page

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    STRS5707 STR-S5708 STR-S5707

ETC
ALLEGRO[Allegro MicroSystems]
Part No. STRS5707 STR-S5708 STR-S5707
OCR Text ...erminals simultaneous reference metal plate against backside VIN reduced from 10.7 V to 4 V IIN 100 A, VIN reduced from 10.7 V -20C TF +1...oxide-filled, alkyl-degenerated oil base, silicone grease: Dow Corning 340, or equivalent www.all...
Description OFF-LINE SWITCHING REGULATORS WITH BIPOLAR SWITCHING TRANSISTOR
 OFF-LINE SWITCHING REGULATORS - WITH BIPOLAR SWITCHING TRANSISTOR 

File Size 160.65K  /  8 Page

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    1N5817 1N5819 1N5818 ON0010

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. 1N5817 1N5819 1N5818 ON0010
OCR Text ...rrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-volt...
Description MDSTBV 2,5/ 3-G
SCHOTTKY BARRIER RECTIFIERS 1 AMPERE 20, 30 and 40 VOLTS
Motorola Preferred Devices
From old datasheet system

File Size 94.58K  /  6 Page

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    BLF147

PHILIPS[Philips Semiconductors]
Part No. BLF147
OCR Text ...namelled 2.2 mm copper wire 1 W metal film resistor 0.4 W metal film resistor 0.4 W metal film resistor 1 W metal film resistor 79 nH length 8 mm; int. dia. 8 mm; leads 2 x 5 mm 2.2 F, 63 V 100 pF 150 nF 240 pF 145 nH length 5 mm; int. dia....
Description VHF power MOS transistor

File Size 84.41K  /  12 Page

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    BLF175

Philips Semiconductors
Part No. BLF175
OCR Text ...0 36640 R1 R2 R3 T1 0.4 W metal film resistor 0.4 W metal film resistor 0.4 W metal film resistor 4 : 1 transformer; 18 turns twisted pair of 0.25 mm copper wire with 10 twists per cm, wound on a grade 4C6 toroidal core 24 1500 1...
Description HF/VHF power MOS transistor

File Size 137.85K  /  18 Page

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    BLW898

Philips Semiconductors
Part No. BLW898
OCR Text ...S2 ferroxcube wideband RF choke metal film resistor metal film resistor 50 ; 0.6 W 10 ; 0.6 W VALUE 8.2 pF 0.6 to 4.5 pF 15 pF 10 nF; 63 V 10 F; 63 V 10 pF 2.4 pF 500 pF 47 F; 63 V 330 pF 5.1 pF 50 50 40 40 220 nH 40 40 50 50 40 9 ...
Description UHF linear power transistor

File Size 102.33K  /  12 Page

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    D2010 D2010UK

Seme LAB
SemeLAB
Part No. D2010 D2010UK
OCR Text METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS ...oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to a...
Description    METAL GATE RF SILICON FET

File Size 14.72K  /  2 Page

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    EB413

MOTOROLA[Motorola, Inc]
Part No. EB413
OCR Text ...with high-density complementary metal oxide semiconductor (HCMOS) designs and so there is often a manufacturing tolerance built into the specification. As a consequence, the minimum trigger voltage can be sufficiently low that the device ca...
Description Resetting MCUs

File Size 229.09K  /  12 Page

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For metal-oxide Found Datasheets File :: 2561    Search Time::1.859ms    
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