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MOTOROLA[Motorola, Inc]
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| Part No. |
mtw35n15e
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| OCR Text |
mtw35n15e/D
Designer'sTM Data Sheet
TMOS E-FET.TM Power Field Effect Transistor TO-247 with Isolated Mounting Hole
N-Channel Enhancement-Mode Silicon Gate
This advanced TMOS E-FET is designed to withstand high energy in the avalanch... |
| Description |
TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM
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| File Size |
169.40K /
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Motorola
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| Part No. |
35N15E
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| OCR Text |
...e. rev 3 order this document by mtw35n15e/d
semiconductor technical data ? motorola, inc. 1996 tmos power fet 35 amperes 150 volts r ds(on) = 0.05 ohm case 340k01, style 1 to247ae motorola preferred device ? d s g ... |
| Description |
Search --To mtw35n15e
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| File Size |
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