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Toshiba, Corp.
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| Part No. |
TK100F04K3
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| OCR Text |
...lified ? low drain - source on resistance : r ds (on) = 2.5 m ? (typ.) ? high forward transfer admittance: | y fs | = 1...off current i dss v ds = 40 v, v gs = 0 v ? ? 10 a drain - source breakdown v... |
| Description |
Power MOSFET (N-ch single 30V<VDSS??0V)
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| File Size |
382.01K /
7 Page |
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it Online |
Download Datasheet
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Xian Semipower Electronic T...
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| Part No. |
SW180N75A
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| OCR Text |
... high ruggedness r ds( on ) (max 4.5 m ? )@v gs =10v gate charge ( typ 178nc) improved dv/dt capability 100% ...off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 75 ... |
| Description |
N-channel TO-220 MOSFET
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| File Size |
509.63K /
5 Page |
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it Online |
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ST Microelectronics
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| Part No. |
BULT3N4
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| OCR Text |
... 0.7 a _ v cc = 150 v i b(on) = - i b(off) = 140 ma t p = 30 s 80 1.2 100 1.6 130 ns s ns t s t f inductive load storage time fall time i c = 1 a _ _ i b(on) = 100 ma v be(off) = - 5 v r bb = 0 v clamp = 150 v l = 1 mh ... |
| Description |
Power Bipolar Medium voltage fast-switching NPN power transistor
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| File Size |
159.17K /
8 Page |
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it Online |
Download Datasheet |
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Silan Microelectronics
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| Part No. |
SVD12N60T
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| OCR Text |
...specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanc...off delay time t d(off) -- 150 -- turn-off fall time t f v dd =300v,i d =12a, rg=25 ... |
| Description |
600V N-CHANNEL MOSFET
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| File Size |
692.38K /
8 Page |
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it Online |
Download Datasheet |
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