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16M168VP 16M168VP 10028MPC ZSGK91W PD55F160 66HDS0 TCLZ3V6 00A01
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For p-ch Found Datasheets File :: 26572    Search Time::4.094ms    
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    ELM35603KA-S

ELM Electronics
Part No. ELM35603KA-S
OCR Text ... p-channel ? vds = 4 0v vds= - 4 0v ? id = 10 a ...ch (max.) p-ch ( max.) unit note drain - s ource voltage vds 4 0 - 4 0 v gate - s ource v oltag e...
Description Complementary MOSFET

File Size 918.16K  /  7 Page

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    TLE4263 TLE4263G TLE4263GS TLE426307

Infineon Technologies AG
Part No. TLE4263 TLE4263G TLE4263GS TLE426307
OCR Text ... voltage regulator tle 4263 ^ p-dso-14-3, -8, -9, -11, 14 p-dso-20-1, -6, -7, -9, -14, -15, -17, - p /pg -dso-8-3, -6, -7, -8, -9, dat...ch 40 60 85 a? reset delay time t rd 1.3 2.8 4.1 ms c d = 100 nf reset reaction time t rr 0.5 1.2 ...
Description 5-V Low Drop Voltage Regulator

File Size 287.71K  /  19 Page

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    Analog Power
Part No. AM3560C
OCR Text p-channel 60-v (d-s) mosfet v ds (v) i d (a) 2.3 2.1 -1.6 -1.4 symbol nch limit pch limit units v ds 60 -60 v gs 20 20 t a =25c 2.3 -1.6 t...ch) 1 v v ds = v gs , i d = -250 ua (p-ch) -1 v gate-body leakage i gss v ds = 0 v, v gs = 20...
Description N & p-channel 60-V (D-S) MOSFET

File Size 348.46K  /  7 Page

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    FGW40N120VD

Fuji Electric
Part No. FGW40N120VD
OCR Text ...50c igbt max. power dissipation p d_igbt 340 w t c =25c fwd max. power dissipation p d_fwd 220 t c =25c operating junction temperature t j -...ch ar ac t er i s t ic s v ge = + 15 v g r aph . 6 g a t e t h resh o l d v ol t age v s . t j...
Description Discrete IGBT (High-Speed V series) 1200V / 40A

File Size 501.29K  /  8 Page

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    FGW40N120H

Fuji Electric
Part No. FGW40N120H
OCR Text ... 150c maximum power dissipation p d 340 w t c =25c operating junction temperature t j -40 ~ +175 c storage temperature t stg -55 ~ +175 c ...ch in g f r e q u e nc y f s [ k hz ] co llec t or- e mitter c o rren t : i ce [a] g r aph . 1 ...
Description Discrete IGBT (High-Speed V series) 1200V / 40A

File Size 430.56K  /  6 Page

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    FGW40N120HD

Fuji Electric
Part No. FGW40N120HD
OCR Text ...50c igbt max. power dissipation p d_igbt 340 w t c =25c fwd max. power dissipation p d_fwd 190 t c =25c operating junction temperature t j ...ch in g f r e q u e nc y f s [ k hz ] co llec t or- e mitter c o rren t : i ce [a] g r aph . 1 ...
Description Discrete IGBT (High-Speed V series) 1200V / 40A

File Size 505.24K  /  8 Page

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    6AM14NCH/PCH

Hitachi Semiconductor
Part No. 6AM14NCH/PCH
OCR Text p-channel power mos fet array application high speed power switching features low on-resistance low drive current high speed switching...ch source n-ch gate n-ch drain p-ch drain p-ch gate p-ch source 6am14 2 absolute maximum ratings ...
Description FET Arrays

File Size 43.77K  /  7 Page

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    B7649

EPCOS
Part No. B7649
OCR Text .....+85 o c db amplitude ripple (p-p) da 1920.0 ... 1980.0 mhz 0.45 0.9 db amplitude ripple (p-p) over any 5 mhz within passband da ch 1920.0 ... 1980.0 mhz 0.2 0.5 db group delay variation over any 5 mhz within passband da ch 1920.0 ... 1...
Description SAW Components

File Size 112.62K  /  11 Page

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    NIKO SEMICONDUCTOR CO.,...
Part No. P2402OV
OCR Text p-channel enhancement mode field effect transistor p2402ov sop-8 halogen-free & lead-free niko-sem product summary v (br)dss r ds(o...ch p-ch 20 -20 v v gs = 0v, i d = -250 ? a gate threshold voltage v gs(th) v ds = v g...
Description N- & p-channel Enhancement Mode Field Effect Transistor

File Size 305.95K  /  9 Page

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    UPA1819GR-9JG-E1 UPA1819GR-9JG-E2

NEC
Part No. UPA1819GR-9JG-E1 UPA1819GR-9JG-E2
OCR Text ...ct transistor pa1819 p-channel mos field effect transistor for switching data sheet document no. g16267ej1v0ds00 (1st edition) d...ch 150 c storage temperature t stg ? 55 to +150 c notes 1. pw 10 s, duty cycle 1% 2. mo...
Description Pch enhancement MOS FET

File Size 78.83K  /  8 Page

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For p-ch Found Datasheets File :: 26572    Search Time::4.094ms    
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