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  p-channel-enhancement Datasheet PDF File

For p-channel-enhancement Found Datasheets File :: 14741    Search Time::2.282ms    
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    AF4835P AF4835PS AF4835PSA AF4835PSL AF4835PSLA

ETC
ANACHIP[Anachip Corp]
Part No. AF4835P AF4835PS AF4835PSA AF4835PSL AF4835PSLA
OCR Text P-Channel Enhancement Mode Power MOSFET Features - Simple Drive Requirement - Low On-resistance - Fast Switching General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedize...
Description P-Channel 30-V (D-S) MOSFET
P-Channel Enhancement Mode Power MOSFET

File Size 245.21K  /  6 Page

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    APM4835 APM4835KC-TR APM4835KC-TU

Anpec Electronics Corporation
ETC[ETC]
ANPEC[Anpec Electronics Coropration]
http://
Part No. APM4835 APM4835KC-TR APM4835KC-TU
OCR Text P-Channel Enhancement Mode MOSFET Features * * * * -30V/-8A, RDS(ON) = 16m(typ.) @ VGS = -10V RDS(ON) = 24m(typ.) @ VGS = -4.5V Super High Density Cell Design Reliable and Rugged SO-8 Package Pin Description S S S G 1 2 3 4 ...
Description P-Channel Enhancement Mode MOSFET

File Size 125.16K  /  9 Page

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    BCM7038

Broadcom
ETC
Part No. BCM7038
OCR Text ...6 In put IF IF D em od N T S C /P A L V id eo D ec ode r 2x M P E G H D /S D V ideo D e co der 6x V ideo DACs V id eo an d G ra phic s P roc es s in g (B V N ) VEC (D ua l C han nel) H D M I/D V I 65 6 R F M od V ID E O C om p one ...
Description Dual High-Definition Digital Video System-on-Chip Solution for Cable, Satellite, and DTV
DUAL HD DIGITAL VIDEO SYSTEM ON CHIP SOLUTION FOR CABLE SATELLITE AND DTV

File Size 383.79K  /  2 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ...ol Showing the Integral Reverse P-N Junction Diode G D MIN - TYP - MAX 8.1 32 UNITS A A S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovered Charge NOTES: VSD trr QRR TJ = 25oC, ISD = 8.1...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ...ol Showing the Integral Reverse P-N Junction Diode G D MIN - TYP - MAX 14 56 UNITS A A S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovered Charge Forward Turn-On Time NOTES: VSD trr QRR tON...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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    IRF530FI IRF530 3003

SGS Thomson Microelectronics
STMicroelectronics
Part No. IRF530FI IRF530 3003
OCR Text ... V DS V DGR V GS ID ID I DM (*) P tot Viso T s tg Tj March 1999 Parameter IRF530 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc...
Description From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

File Size 46.69K  /  6 Page

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    IRF530FP 5758

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. IRF530FP 5758
OCR Text ...l V DS VDGR V GS ID ID I DM (*) P tot V ISO T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drai...
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system

File Size 76.48K  /  5 Page

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text Philips Semiconductors Product specification N-channel TrenchMOSTM transistor IRF530N FEATURES * 'Trench' technology * Low on-state resistance * Fast switching * Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS ...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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    IRF840B IRFS840B IRFS840 IRF840

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF840B IRFS840B IRFS840 IRF840
OCR Text ...ed) (t), T h e r m a l R e s p o n s e 10 0 D = 0 .5 0 .2 10 -1 N o te s : 1 . Z J C (t) = 0 .9 3 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) 0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le...
Description 500V N-Channel MOSFET

File Size 908.43K  /  10 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of oper...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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