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  rad-hard Datasheet PDF File

For rad-hard Found Datasheets File :: 1119    Search Time::3.015ms    
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    INTERSIL[Intersil Corporation]
Part No. FRM450H FRM450D FN3236 FRM450R
OCR Text Rad Hard, N-Channel Power MOSFETs Package TO-204AA Features * 10A, 500V, RDS(on) = 0.600 * Second Generation Rad Hard MOSFET Results From New Design Concepts * Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs ...
Description 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs
10A/ 500V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFETs
From old datasheet system

File Size 47.16K  /  6 Page

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    IRF[International Rectifier]
Part No. IRHN9150
OCR Text ... TRANSISTOR -100 Volt, 0.120, RAD HARD HEXFET International Rectifier's P-channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads ...
Description TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.120ohm, Id=-22A)

File Size 81.76K  /  4 Page

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    IRF[International Rectifier]
Part No. IRHN9130
OCR Text ...) TRANSISTOR -100 Volt, 0.30, RAD HARD HEXFET International Rectifier's P-channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads ...
Description TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-11A)

File Size 88.01K  /  4 Page

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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRHN8230 IRHN7230
OCR Text ...230 IRHN8230 N-CHANNEL MEGA RAD HARD 200 Volt, 0.40, MEGA RAD HARD HEXFET International Rectifier's MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation...
Description TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) 晶体管N沟道(BVdss \u003d 200V的电压,的Rds(on)\u003d 0.40ohm,身份证\u003d 9.0,9.0

File Size 450.04K  /  14 Page

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    IRF[International Rectifier]
Part No. IRHN8130 IRHN7130
OCR Text ...130 IRHN8130 N-CHANNEL MEGA RAD HARD 100 Volt, 0.18, MEGA RAD HARD HEXFET International Rectifier's MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation...
Description TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14)

File Size 444.31K  /  14 Page

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    IRF[International Rectifier]
Part No. IRHN7C50SE IRHN2C50SE
OCR Text ...EL SINGLE EVENT EFFECT (SEE) RAD HARD 600 Volt, 0.60, (SEE) RAD HARD HEXFET International Rectifier's (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation...
Description TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)

File Size 80.62K  /  4 Page

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    JANSR2N7389

International Rectifier
Part No. JANSR2N7389
OCR Text ...SISTOR IRHF9130 JANSR2N7389 RAD HARD [REF: MIL-PRF-19500/630] P-CHANNEL -100 Volt, 0.30, RAD HARD HEXFET International Rectifier's P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdow...
Description TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)

File Size 91.26K  /  4 Page

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    INTERSIL[Intersil Corporation]
Part No. FRM244D FN3230 FRM244R FRM244H
OCR Text Rad Hard, N-Channel Power MOSFETs Package TO-204AA Features * 12A, 250V, RDS(on) = 0.400 * Second Generation Rad Hard MOSFET Results From New Design Concepts * Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs ...
Description 12A/ 250V/ 0.400 Ohm/ Rad Hard/ N-Channel Power MOSFETs
12A, 250V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs
From old datasheet system

File Size 47.10K  /  6 Page

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    IRF[International Rectifier]
Part No. IRHM9160
OCR Text ... TRANSISTOR -100 Volt, 0.087, RAD HARD HEXFET International Rectifier's P-channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads ...
Description TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-35*A)

File Size 87.31K  /  4 Page

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    INTERSIL[Intersil Corporation]
Part No. FRL430H FRL430R FRL430D FN3234
OCR Text Rad Hard, N-Channel Power MOSFETs Package TO-205AF Features * 2A, 500V, RDS(on) = 2.50 * Second Generation Rad Hard MOSFET Results From New Design Concepts * Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at...
Description 2A/ 500V/ 2.50 Ohm/ Rad Hard/ N-Channel Power MOSFETs
2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs
From old datasheet system

File Size 46.72K  /  6 Page

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For rad-hard Found Datasheets File :: 1119    Search Time::3.015ms    
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