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    1.5SMC68AT3 1.5SMC24AT3 1.5SMC51AT3 1.5SMC30AT3 1.5SMC13AT 1.5SMC56AT3 1.5SMC33AT3 1.5SMC12AT3 1.5SMC10AT3 1.5SMC15AT3G

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ONSEMI[ON Semiconductor]
Part No. 1.5SMC68AT3 1.5SMC24AT3 1.5SMC51AT3 1.5SMC30AT3 1.5SMC13AT 1.5SMC56AT3 1.5SMC33AT3 1.5SMC12AT3 1.5SMC10AT3 1.5SMC15AT3G 1.5SMC7.5AT3 1.5SMC8.2AT3 1.5SMCXXXAT3 15SMC68AT3 1.5SMCXXXAT3G 1.5SMC11AT3 1.5SMC13AT3 1.5SMC15AT3 1.5SMC16AT3 1.5SMC18AT3 1.5SMC20AT3 1.5SMC22AT3 1.5SMC27AT3 1.5SMC36AT3 1.5SMC39AT3 1.5SMC43AT3 1.5SMC47AT3 1.5SMC6.8AT3 1.5SMC62AT3G 1.5SMC82AT3 1.5SMC9.1AT3 1.5SMC91AT3 1.5SMC62AT3 1.5SMC16A 1.5SMC22A 1.5SMC24A 1.5SMC27A 1.5SMC43A 1.5SMC47A 1.5SMC51A 1.5SMC56A 1.5SMC68A 1.5SMC82A 1.5SMC15A 1.5SMC62A 1.5SMC75A 1.5SMC75AT3
OCR Text ... affected. 1. 10 X 1000 ms, non-repetitive 2. 1 square copper pad, FR-4 board 3. FR-4 board, using ON Semiconductor minimum recommended footprint, as shown in 403 case outline dimensions spec. 4. 1/2 sine wave (or equivalent square wave), P...
Description Zener Diode
Transistor Suppressor
High Power
1500 Watt Peak Power Zener Transient Voltage Suppressors
ELR 2/1-230Z
1500 Watt Peak Power Zener Transient Voltage Suppressors 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE

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    SPP06N60C3 SPP06N60C307

Infineon Technologies AG
Part No. SPP06N60C3 SPP06N60C307
OCR Text ... single pulse Avalanche energy, repetitive t AR1),2) Avalanche current, repetitive t AR1) Drain source voltage slope Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V GS Power dissipation Operating and storage temperature P tot T j...
Description CoolMOSTM Power Transistor Features New revolutionary high voltage technology

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    SPP06N60C309

Infineon Technologies AG
Infineon Technologies A...
Part No. SPP06N60C309
OCR Text ... single pulse Avalanche energy, repetitive t AR1),2) Avalanche current, repetitive t AR1) Drain source voltage slope I D,pulse E AS E AR I AR I D=6.2 A, V DS=480 V, T j=125 C static AC (f >1 Hz) T C=25 C T C=25 C I D=3.1 A, V DD=50 V I D=6....
Description CoolMOSTM Power Transistor Features New revolutionary high voltage technology
   CoolMOSTM Power Transistor Features New revolutionary high voltage technology

File Size 221.13K  /  11 Page

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    TD250N TT250N

eupec GmbH
Part No. TD250N TT250N
OCR Text ...rspannung Tvj = -40C... Tvj max repetitive peak forward off-state and reverse voltages Vorwarts-Stospitzensperrspannung non-repetitive peak forward off-state voltage Ruckwarts-Stospitzensperrspannung non-repetitive peak reverse voltage Durc...
Description Netz-Thyristor-Modul Phase Control Thyristor Module

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    SCI0251700

celduc-relais
Part No. SCI0251700
OCR Text ...ERISTIC Mains voltage range Non-repetitive peak voltage Overvoltage protection Off-state max reverse voltage drop (internal diode) Maximum nominal currents Max. non-repetitive peak current LABEL Ut Utp D1 -Ut Ie max Iepeak Iemin Ielk max VC...
Description IGBT BASED DC SOLID-STATE RELAY

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    S2S4BY0F S2S4AY0F S2S4RAYF S2S4RY0F S2S4000F S2S4LY0F S2S4RBYF S2S4LA0F S2S4A00F S2S4B00F S2S4L00F S2S4LB S2S4LB0F S2S4R

Sharp Electrionic Components
Central Technologies / CT Magnetics
Part No. S2S4BY0F S2S4AY0F S2S4RAYF S2S4RY0F S2S4000F S2S4LY0F S2S4RBYF S2S4LA0F S2S4A00F S2S4B00F S2S4L00F S2S4LB S2S4LB0F S2S4R00F S2S4RB0F S2S4Y
OCR Text ...4V-0) () Features 1. High repetitive peak off-state voltage (VDRM : 600V) 2. Zero crossing functionality (VOX : MAX. 35V) 3. IFT ranks available (see Model Line-up section in this datasheet) 4. 4 pin Mini-flat package 5. Superior nois...
Description Zero cross type Mini-Flat Package Phototriac Coupler for triggering
1 CHANNEL TRIAC OUTPUT WITH ZERO CRSVR OPTOCOUPLER LEAD FREE, PLASTIC, MINIFLAT, SOP-4

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    Vishay Semiconductors
Part No. IRKV56-12
OCR Text ...850 1310 t=10ms no voltage non-repetitive on-state 890 1370 t=8.3ms reapplied current 715 1100 t=10ms 100% v rrm 750 1150 t=8.3ms reapplied 940 1450 t=10ms t j = 25 o c, 985 1520 t=8.3ms no voltage reapplied i 2 t max. i 2 t for fusi...
Description Silicon Controlled Rectifier, 86.35 A, 1200 V, SCR, TO-240AA

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    PR31MA11NXPF PR31MA11NTZF

Sharp Electrionic Components
Sharp Electronics, Corp.
Part No. PR31MA11NXPF PR31MA11NTZF
OCR Text ...ullwing also available) 4. High repetitive peak off-state voltage (VDRM : 600V) 5. Superior noise immunity (dV/dt : MIN. 500V/s) 6. Response time, ton : MAX. 100s 7. Lead-free components are also available (see Model Line-up section in this...
Description Non-Zero Cross type DIP 6pin SSR
TRIGGER OUTPUT SOLID STATE RELAY, 5000 V ISOLATION-MAX LEAD FREE, PLASTIC, DIP-6

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    BUK7Y53-100B

NXP Semiconductors
Part No. BUK7Y53-100B
OCR Text ...alanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 81 mJ NXP Semiconductors BUK7Y53-100B N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 4 mb c S S G D Pinning information S...
Description N-channel TrenchMOS standard level FET
   N-channel TrenchMOS standard level FET

File Size 205.64K  /  13 Page

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    PC3SH11YFZ PC3SH11YFZAF PC3SH11YIPB PC3SH11YIPBF

Sharp Electrionic Components
Sharp Microelectronics of the Americas
Sharp Electronics, Corp.
Part No. PC3SH11YFZ PC3SH11YFZAF PC3SH11YIPB PC3SH11YIPBF
OCR Text ...4V-0) () Features 1. High repetitive peak off-state voltage (VDRM : 600V) 2. Non-zero crossing functionality 3. IFT ranks available (see Model Line-up section in this datasheet) 4. 4 pin DIP package 5. Reinforced insulation type (MIN....
Description VDRM : 600V, Reinforced insulation type Non-zero cross type DIP 4 pin Phototriac Coupler for triggering
1 CHANNEL TRIAC OUTPUT OPTOCOUPLER SMT, PLASTIC, DIP-4
1 CHANNEL TRIAC OUTPUT OPTOCOUPLER LEAD FREE, SMT, PLASTIC, DIP-4

File Size 297.34K  /  15 Page

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