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SGS Thomson Microelectronics
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| Part No. |
STU26NM50
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| OCR Text |
... capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 3000 700 50 pf pf pf symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 250 v, i d =13a r g = 4.7... |
| Description |
N-CHANNEL 500V 0.10 OHM 26A TO-247/MAX220/MAX220I ZENER-PROTECTED MDMESH POWER MOSFET
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| File Size |
134.15K /
11 Page |
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it Online |
Download Datasheet
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Alpha & Omega Semiconductor
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| Part No. |
AOTF4N60
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| OCR Text |
...e v gs =10v, i d =2a body diode reverse recovery charge i f =4a,di/dt=100a/ s,v ds =100v maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime dynamic parameters turn-off delaytime v gs =10v, v ds =300v, ... |
| Description |
Single HV MOSFETs (500V - 1000V)
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| File Size |
359.99K /
6 Page |
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it Online |
Download Datasheet |
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Alpha & Omega Semiconductor
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| Part No. |
AOL1240
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| OCR Text |
... =20a gate-body leakage current reverse transfer capacitance v gs =0v, v ds =20v, f=1mhz v ds =v gs i d =250 a v ds =0v, v gs =20v maximum body-diode continuous current g input capacitance output capacitance forward transconductance i s ... |
| Description |
Single MV MOSFETs (40V - 400V)
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| File Size |
276.89K /
6 Page |
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it Online |
Download Datasheet |
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Alpha & Omega Semiconductor
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| Part No. |
AOW4S60
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| OCR Text |
...eliability without notice. peak reverse recovery current i f =2a,di/dt=100a/ s,v ds =400v v v gs =10v, i d =2a, t j =150c drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c a v ds =0v, v gs =30v v ds =600v, v gs =0v v ds =5v,... |
| Description |
Single HV MOSFETs (500V - 1000V)
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| File Size |
296.02K /
6 Page |
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it Online |
Download Datasheet |
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