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				Qimonda AG http://
Part No.	HYB18M1G16 HYB18M1G160BF-7.5 HYE18M1G161BF-7.5 HYE18M1G160BF-7.5 HYB18M1G161BF-7.5 HYE18M1G160BF-6 HYE18M1G161BF-6
OCR Text	...half, quarter) Auto refresh and self refresh modes 8192 refresh cycles / 64ms Auto precharge Commercial (-0C to +70C) and Extended (-25C to ...aligned with read data, centered with write data. Used to capture write data. LDQS corresponds to th...
Description	1-Gbit x16 DDR Mobile-RAM 64M X 16 DDR DRAM, 5.5 ns, PBGA60
File Size	2,428.42K / 65 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4H1G0838M-ULB3 K4H1G0438M-LA2 K4H1G0438M-LB0 K4H1G0438M-LB3 K4H1G0438M-UC K4H1G0438M-UC_LA2 K4H1G0438M-UC_LB0 K4H1G0438M-UC_LB3 K4H1G0438M-UC0 K4H1G0438M-UC2 K4H1G0438M-UC3 K4H1G0438M-UCA2 K4H1G0438M-UCB0 K4H1G0438M-UCB3 K4H1G0438M-ULA2 K4H1G0438M-ULB0 K4H1G0438M-ULB3 K4H1G0838M-LA2 K4H1G0838M-LB0 K4H1G0838M-LB3 K4H1G0838M-UC_LA2 K4H1G0838M-UC_LB0 K4H1G0838M-UC_LB3 K4H1G0838M-UC0 K4H1G0838M-UC2 K4H1G0838M-UC3 K4H1G0838M-UCA2 K4H1G0838M-UCB0 K4H1G0838M-UCB3 K4H1G0838M-ULA2 K4H1G0838M-ULB0
OCR Text	... masking only (x4, x8) * Auto & Self refresh * 7.8us refresh interval(8K/64ms refresh) * tRFC(Refresh row cycle time) = 120ns * Maximum burs...aligned with read data, centered in write data. Used to capture write data. For the x16, LDQS corres...
Description	1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
File Size	203.93K / 23 Page	View it Online	Download Datasheet

				Nanya Techology
Part No.	NT5DS32M8BW
OCR Text	...burst access ? auto refresh and self refresh modes ? 7.8 m s maximum average periodic refresh interval ? 2.5v (sstl_2 compatible) i/o ? v dd...aligned with data for reads and center-aligned with data for writes. the 256mb ddr sdram operates f...
Description	(NT5DSxxMxBx) 256Mb DDR SDRAM
File Size	1,959.62K / 80 Page	View it Online	Download Datasheet


Part No.	MT8VDDT3264HDY-202XX MT8VDDT6464HDG-202XX
OCR Text	... cas latency auto refresh and self refresh modes 15.6s (128mb), 7.8125s (256mb and 512mb) maximum average periodic refresh interval go...aligned with read data, centered in write data. used to capture data. 12, 26, 48, 62, 134, 148, 17...
Description	32M X 64 DDR DRAM MODULE, 0.8 ns, DMA200 64M X 64 DDR DRAM MODULE, 0.8 ns, DMA200
File Size	499.43K / 30 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4H280838F-TC_LB3 K4H280438F K4H280438F-TC_LA0 K4H280438F-TC_LA2 K4H280438F-TC_LB0 K4H280838F-TC_LA2 K4H280838F-TC_LB0
OCR Text	... masking only (x4, x8) * Auto & Self refresh * 15.6us refresh interval(4K/64ms refresh) * Maximum burst refresh cycle : 8 * 66pin TSOP II pa...aligned with read data, centered in write data. Used to capture write data. For the x16, LDQS corres...
Description	128Mb F-die DDR SDRAM Specification
File Size	203.97K / 23 Page	View it Online	Download Datasheet

				Nanya Techology
Part No.	NT5DS32M8BF NT5DS64M4BT
OCR Text	...burst access ? auto refresh and self refresh modes ? 7.8 m s maximum average periodic refresh interval ? sstl_2 compatible i/o interface ? v...aligned with data for reads and center-aligned with data for writes. the 256mb ddr sdram operates f...
Description	(NT5DSxxMxBx) 256Mb DDR SDRAM
File Size	1,953.01K / 80 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4H280838F-ULB3 K4H280438F-UC K4H280438F-UCA0 K4H280438F-UCA2 K4H280438F-UCB0 K4H280438F-ULA0 K4H280438F-ULA2 K4H280438F-ULB0 K4H280838F-UCA2 K4H280838F-UCB0 K4H280838F-UCB3 K4H280838F-ULA2 K4H280838F-ULB0
OCR Text	... masking only (x4, x8) * Auto & Self refresh * 15.6us refresh interval(4K/64ms refresh) * Maximum burst refresh cycle : 8 * 66pin TSOP II Pb...aligned with read data, centered in write data. Used to capture write data. For the x16, LDQS corres...
Description	128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
File Size	295.20K / 23 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4H510738E-TC_LB0 K4H510638E-TC_LA2 K4H510638E-TC_LAA K4H510638E-TC_LB0 K4H510738E K4H510738E-TC_LA2 K4H510738E-TC_LAA
OCR Text	... masking only (x4, x8) * Auto & Self refresh * 7.8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 66pin TSOP II pac...aligned with read data, centered in write data. Used to capture write data. No Connect : No internal...
Description	Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
File Size	188.40K / 22 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	K4H560838E-GCCC K4H560438E-GCC4 K4H560438E-GCCC K4H560838E-GCC4
OCR Text	... masking only (x4, x8) * Auto & Self refresh * 7.8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 60Ball FBGA packa...aligned with read data, centered in write data. Used to capture write data. No Connect : No internal...
Description	DIODE ZENER SINGLE 300mW 27Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOT-23 3K/REEL 256Mb的电子芯片的DDR 400内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 29.8Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOT-23 3K/REEL 256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
File Size	195.42K / 18 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4H560838E-GLB3 K4H560438E-GC K4H560438E-GC_LA2 K4H560438E-GC_LB0 K4H560438E-GC_LB3 K4H560438E-GCA2 K4H560438E-GCB0 K4H560438E-GCB3 K4H560438E-GLA2 K4H560438E-GLB0 K4H560438E-GLB3 K4H560838E-GC_LA2 K4H560838E-GC_LB0 K4H560838E-GC_LB3 K4H560838E-GCA2 K4H560838E-GCB0 K4H560838E-GCB3 K4H560838E-GLA2 K4H560838E-GLB0
OCR Text	... masking only (x4, x8) * Auto & Self refresh * 7.8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 60Ball FBGA packa...aligned with read data, centered in write data. Used to capture write data. No Connect : No internal...
Description	256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
File Size	241.25K / 24 Page	View it Online	Download Datasheet

For self-aligned Found Datasheets File :: 2379 Search Time::1.453ms
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