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EUDYNA[Eudyna Devices Inc]
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| Part No. |
F0100209B
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| OCR Text |
...rms sufficient wirepull and die-shear strength. The heating time of one minute at the temperature of 310 C gave satisfactory results for die-bonding with AuSn performs. The heating and ultrasonic wire-bonding at the temperature of 150 C by ... |
| Description |
3.3 V /5V 622 Mb/s Receiver Transimpedance Amplifier
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| File Size |
439.19K /
6 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
F0100404B
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| OCR Text |
...rms sufficient wirepull and die-shear strength. The heating time of one minute at the temperature of 310 C gave satisfactory results for die-bonding with AuSn performs. The heating and ultrasonic wire-bonding at the temperature of 150 C by ... |
| Description |
3.3V/5V 1.25 Gb/s Receiver Transimpedance Amplifier
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| File Size |
459.81K /
10 Page |
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it Online |
Download Datasheet |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
F0100505B
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| OCR Text |
...rms sufficient wirepull and die-shear strength. The heating time of one minute at the temperature of 310 C gave satisfactory results for die-bonding with AuSn preforms. The heating and ultrasonic wire-bonding at the temperature of 150 C by ... |
| Description |
3.3 V /5V 2.5 Gb/s NRZ Receiver Transimpedance Amplifier
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| File Size |
560.54K /
12 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
F0100604B
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| OCR Text |
...rms sufficient wirepull and die-shear strength. The heating time of one minute at the temperature of 310 C gave satisfactory results for die-bonding with AuSn performs. The heating and ultrasonic wire-bonding at the temperature of 150 C by ... |
| Description |
10 Gb/s Receiver Transimpedance Amplifier
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| File Size |
1,026.01K /
9 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
F0321818B
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| OCR Text |
...rms sufficient wirepull and die-shear strength. The heating time of one minutes at the temperature of 310 C gave satisfactory results for die-bonding with AuSn performs. The heating and ultrasonic wire-bonding at the temperature of 150 C by... |
| Description |
2 GHz Bandwidth Limiting Amplifier
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| File Size |
497.31K /
11 Page |
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it Online |
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NXP Semiconductors N.V.
NXP[NXP Semiconductors]
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| Part No. |
MF1ICS2005W7D MF1ICS2005 MF1ICS2005U7D
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| OCR Text |
...p material: Bump hardness: Bump shear strength: Bump height: Bump height uniformity: - within a die: - within a wafer: - wafer to wafer:
> 99.9% pure Au 35 - 80 HV 0.005 > 70 MPa 18 m 2 m 3 m 4 m 1.5 m 104 x 104 m 89 x 104 m 5 m spu... |
| Description |
Sawn bumped 120レm wafer addendum
Sawn bumped 120μm wafer addendum
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| File Size |
80.73K /
7 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MPVZ5004GW7U MPVZ5004G MPVZ5004G6T1 MPVZ5004G6U MPVZ5004G7U MPVZ5004GW6U
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| OCR Text |
... is achieved by integrating the shear-stress strain gauge, temperature compensation, calibration and signal conditioning circuitry onto a single monolithic chip. Figure 2 illustrates the Differential or Gauge configuration in the basic chip... |
| Description |
Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
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| File Size |
342.63K /
12 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MPVZ5150GC7U MPVZ5150 MPVZ5150G MPVZ5150GC6T1
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| OCR Text |
...-Based Systems Patented Silicon shear Stress Strain Gauge Easy-to-Use Chip Carrier Option Increased media compatibility fluorocarbon gel
MPVZ5150 SERIES
INTEGRATED PRESSURE SENSOR 0 to 150 kPa (0 to 21.75 PSI) 0.2 to 4.7 V Output
SMA... |
| Description |
Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
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| File Size |
199.63K /
7 Page |
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it Online |
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