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Micron Technology, Inc.
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| Part No. |
MT4LDT464HX
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| OCR Text |
sodimms micron technology, inc., reserves the right to change products or specifications without notice. dm83.p65 ? rev. 2/99 ?1999, micron technology, inc. 1 4, 8 meg x 64 dram sodimms small-outline dram module features ? jedec pinout in a... |
| Description |
SMALL-OUTLINE DRAM MODULE
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| File Size |
618.85K /
32 Page |
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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
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| Part No. |
M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554BG3-CD5_CC M470T6554BGZ0-CD5_CC M470T6554BGZ3-CD5_CC M470T6554BZ0-LD5_CC M470T6554BZ3-LD5_CC M470T2953BY0-LD5_CC M470T3354BG0-CD5_CC M470T3354BG3-CD5_CC M470T3354BGZ0-CD5_CC M470T3354BGZ3-CD5_CC M470T2953BSY3-CD5_CC M470T3354BZ0-LD5_CC M470T3354BZ3-LD5_CC M470T2953BY3-LD5_CC M470T2953BS3-CD5_CC M470T2953BSY0-CD5_CC M470T2953BXX M470T2953BY0 M470T2953BY0-LD5/CC M470T3354BZ0-LD5/CC M470T6554BZ0-LD5/CC M470T2953BS0-CD5/CC M470T3354BG0-CD5/CC M470T6554BG0-CD5/CC M470T3354BZ3-LD5/CC M470T2953BY3-LD5/CC M470T6554BZ3-LD5/CC M470T3354BG3-CD5/CC M470T6554BG3-CD5/CC M470T2953BSY0-CD5/CC M470T2953BSY3-CD5/CC M470T2953BS3-CD5/CC M470T3354BGZ0-CD5/CC M470T3354BGZ3-CD5/CC M470T6554BGZ3-CD5/CC M470T6554BGZ0-CD5/CC
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| OCR Text |
sodimms
DDR2 SDRAM
DDR2 Unbuffered SODIMM
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN TH... |
| Description |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
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| File Size |
325.20K /
19 Page |
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it Online |
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IDT
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| Part No. |
IDT7M9536 IDT7M9537
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| OCR Text |
...64-bit synchronous DRAM (SDRAM) sodimms. One or both SODIMM sockets may be populated, each occupying separate banks. Parity is not supported on the SDRAM. Each SODIMM can support one or two banks of SDRAM dependent on the type of SODIMM bei... |
| Description |
COMPACT PCI SMART I/O 64 CARD
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| File Size |
14.32K /
3 Page |
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it Online |
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Micron Technology, Inc.
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| Part No. |
MT4LDT164HG MT8LDT264HG
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| OCR Text |
sodimms micron technology, inc., reserves the right to change products or specifications without notice. dm66.p65 C rev. 6/98 ? 1998, micron technology, inc. 1 1, 2 meg x 64 dram sodimms obsolete small-outline dram module features ? jedec p... |
| Description |
1Meg x 64 DRAM sodimms(1M x 64动态RAM双列直插存储器模块（小外型封装）)
2Meg x 64 DRAM sodimms(2M x 64动态RAM双列直插存储器模块（小外型封装）)
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| File Size |
393.96K /
30 Page |
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it Online |
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Micron Technology, Inc.
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| Part No. |
MT2LDT432HG-6X MT2LDT432HG-5X MT4LDT832HG-5XS MT2LDT432HG-5XS MT2LDT432HG-6XS
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| OCR Text |
sodimms
SMALL-OUTLINE DRAM MODULE
FEATURES
* JEDEC pinout in a 72-pin, small-outline, dual inline memory module (SODIMM) * 16MB (4 Meg x 32) and 32MB (8 Meg x 32) * High-performance CMOS silicon-gate process * Single +3.3V 0.3V power s... |
| Description |
SMALL-OUTLINE DRAM MODULE 小外形DRAM模块
Silver Mica Capacitor; Capacitance:1200pF; Capacitance Tolerance: 5%; Series:CDV30; Voltage Rating:1500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:11.1mm; Leaded Process Compatible:No RoHS Compliant: No 小外形DRAM模块
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| File Size |
394.22K /
25 Page |
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it Online |
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Price and Availability
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