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| Part No. |
ECG350 ECG351 ECG352 ECG354 ECG353 ECG361 ECG362 ECG363 ECG364 ECG365 ECG366 ECG367 ECG368 ECG369
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| Description |
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 2.5A I(C) | SOT-122
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 4A I(C) | SOT-122
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 20A I(C) | sot-119
TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 2.5A I(C) | SOT-123
TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 1A I(C) | SOT-123
TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 400MA I(C) | TO-39
TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 400MA I(C) | SOT-122
TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 800MA I(C) | SOT-122
TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 2A I(C) | SOT-122
TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 3A I(C) | sot-119
TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 6A I(C) | sot-119
TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 8A I(C) | sot-119
TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 10A I(C) | sot-119
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 2.1A I(C) | TO-66
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| File Size |
110.32K /
1 Page |
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it Online |
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SPC Technology
ASI[Advanced Semiconductor]
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| Part No. |
BLU20-12 BLU2012 BLU20
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| Description |
TRANSISTOR | BJT | NPN | 4A I(C) | sot-119 晶体管|晶体管|叩| 4A条一c）|采用SOT - 119
NPN SILICON RF POWER TRANSISTOR
From old datasheet system
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| File Size |
13.65K /
1 Page |
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it Online |
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http://
Yuasa Battery, Inc.
Integrated Circuit Technology Corp
Microsemi, Corp.
Sony, Corp.
Sony Corporation
|
| Part No. |
CXK77P36E160GB-43BE CXK77P18E160GB-4BE CXK77P18E160GB-43BE CXK77P36E160GB-42BE CXK77P18E160GB-42E CXK77P18E160GB-4AE CXK77P18E160GB-44E CXK77P18E160GB-43E CXK77P36E160GB-42E CXK77P18E160GB-43AE CXK77P36E160GB-43AE CXK77P18E160GB-42AE CXK77P18E160GB-4BF CXK77P36E160GB-4BE CXK77P36E160GB-42AE CXK77P36E160GB-4AE
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| Description |
1M X 18 STANDARD SRAM, 3.7 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 4.5 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 3.8 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 4.1 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) 16Mb的龙运RL HSTL高速同步静态存储器（为512k × 3600万18
CAP 820PF 50V 20% X7R SMD-0603 TR-7 PLATED-NI/SN
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| File Size |
261.11K /
25 Page |
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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
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| Part No. |
K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7P403622B-HC20 K7P403622B K7P403622B-HC16 K7P403622B-HC25 K7P401822B-HC160 K7P403622B-HC200 K7P401822B-HC20T
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| Description |
SENSOR DIFF VACUUM GAGE 10 H2O 128K × 36
128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36
256K X 18 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
128K X 36 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, BGA-119
SENSOR DIFF VACUUM GAGE 1PSI
SENSOR ABSOLUTE 0-15PSIA
128Kx36 & 256Kx18 Synchronous Pipelined SRAM
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| File Size |
278.02K /
13 Page |
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it Online |
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TOKO, Inc.
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| Part No. |
K7P323688M-HC250 K7P323688M-GC250
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| Description |
1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANCE, BGA-119
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| File Size |
390.95K /
14 Page |
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it Online |
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Integrated Silicon Solution, Inc.
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| Part No. |
IS61NVP51236-250B2I IS61NVP102418-250B2I IS61NVP102418-200B2I
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| Description |
512K X 36 ZBT SRAM, 2.6 ns, PBGA119 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119
1M X 18 ZBT SRAM, 2.6 ns, PBGA119 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119
1M X 18 ZBT SRAM, 3.1 ns, PBGA119 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119
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| File Size |
204.08K /
36 Page |
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it Online |
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Price and Availability
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