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				IRF[International Rectifier]
Part No.	IRF2804S-7P
OCR Text	...Repetitive Avalanche Allowed up to Tjmax VDSS = 40V G S RDS(on) = 1.6m ID = 160A Description Specifically designed for Automotive...71 17 150 110 105 4.5 7.5 6930 1750 970 5740 1570 2340 --- --- 1.6 4.0 --- 20 250 200 -200 260 --- -...
Description	AUTOMOTIVE MOSFET
File Size	260.32K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3415L IRF3415S
OCR Text	... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...71 69 7.5 2400 640 340 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID ...
Description	Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A) Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)
File Size	152.65K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3415
OCR Text	... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...71 69 4.5 7.5 2400 640 340 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 2...
Description	Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A) Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)
File Size	90.69K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
OCR Text	... Avalanche Voltage and Current TO-220AB IRF3704 D2Pak IRF3704S TO-262 IRF3704L Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25C I...71 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (...
Description	20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A? Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A) Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A) Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?) Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A) CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 77A条? TRANSISTOR \| MOSFET \| N-CHANNEL \| 20V V(BR)DSS \| 77A I(D) \| TO-263AB
File Size	123.62K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3805 IRF3805L IRF3805S
OCR Text	...Repetitive Avalanche Allowed up to Tjmax G VDSS = 55V RDS(on) = 3.3m Description Specifically designed for Automotive applications, ...71 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, I...
Description	AUTOMOTIVE MOSFET
File Size	358.50K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305L IRF5305S
OCR Text	... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...71 20 280 -16 11 -5.8 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C T...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	167.31K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...71 20 280 -16 11 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V mJ...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7106 IRF7106TR
OCR Text	... advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switchin...71 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage IRF7106 100 N-Channel 100 ISD...
Description	20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss= -20V)
File Size	157.44K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text	... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...71 ns TJ = 25C, IF = -7.2A --- 84 130 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn...
Description	-60V Single P-Channel HEXFET Power MOSFET in a TO-262 package -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.175ohm，身份证\u003d- 12A条） Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)
File Size	167.05K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z24N IRF9Z24NPBF
OCR Text	... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...71 ns TJ = 25C, IF = -7.2A --- 84 130 C di/dt = -100A/s Intrinsic turn-on time is negligible (turn-...
Description	-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)
File Size	105.16K / 8 Page	View it Online	Download Datasheet

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