|
|
|
NEC[NEC]
|
Part No. |
2SA1010 2SA1010-AZ 2SA10102
|
OCR Text |
... = -5.0 A, IB1 = -IB2 = -0.5 A, vbe(OFF) = 5.0 V, L = 180 H, clamped IC = -10 A, IB1 = -1.0 A, IB2 = -0.5 A, vbe(OFF) = 5.0 V, L = 180 H, clamped VCB = -100 V, IE = 0 VCE = -100 V, RBE = 51 , Ta = 125 C VCE = -100 V, vbe(OFF) = 1.5 V VCE = ... |
Description |
Silicon transistor SILICON POWER TRANSISTOR 7 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB SC-46, 3 PIN
|
File Size |
115.28K /
6 Page |
View
it Online |
Download Datasheet |
|
|
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conduct...
|
Part No. |
FTSO5771
|
OCR Text |
...ic = 3.0 ma, ib = 0 lo = 100^a, vbe = 0 lc=100/a le = 0 le = 100/ia, lc = 0 vcb = -8.0 v, lc = 0 veb = -4.5 v, lo = 0 vce. = -8.0 v. vbe = o vce = -8.0 v, vbe = 0, ta = 125c lo = 1.0ma, vce = -0.5 v lc = 10ma, vce = -0.3 v lo = 50ma, vce = ... |
Description |
PNP Ultra High Speed Saturated Logic Switch
|
File Size |
82.64K /
2 Page |
View
it Online |
Download Datasheet |
|
|
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conduct...
|
Part No. |
MJ13009
|
OCR Text |
...ff current (vcev = rated value, vbe(0fl) = 1 .5 vdc) (vcev = rated value, vbe(ofl) = 1 .5 vdc, tc = 100c) emitter cutoff current (veb = 9 vdc, lc = 0) vceo(sus) 'cev 'ebo 400 - - - - - - 1 5 1 vdc madc madc second breakdown second breakdown... |
Description |
NPN Silicon Power Transistors
|
File Size |
83.51K /
2 Page |
View
it Online |
Download Datasheet |
|
|
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conduct...
|
Part No. |
MJ13080 MJ13081
|
OCR Text |
...ff current c/cev - rated value. vbe(oh| ? 1 ,6 vdc) (vcev = to""* value, vbe(off ) = ' 6 vdc, tc = 1 00c| collactor cutoff currant wce = rated vcev. rbe ? so n, tc = iooo emitter cutoff current (veb = 6.0vdc, ic = 0) vceo(sus) "cev icer <eb... |
Description |
NPN SILICON POWER TRANSISTORS
|
File Size |
88.20K /
2 Page |
View
it Online |
Download Datasheet |
|
|
|
Winsem Technology
|
Part No. |
WTBV53DM WTBV53DMR
|
OCR Text |
...se-emitter saturation voltage vbe(sat1) ic/ib = 0.5a / 0.1a 1.2 v vbe(sat2) ic/ib = 1a / 0.25a 1.4 resistive load switching time (ratings) rise time t r vcc=250v, ic=1a, ib1 = ib2 = 0.2 a , tp... |
Description |
POWER TRANSISTOR
|
File Size |
417.98K /
5 Page |
View
it Online |
Download Datasheet |
|
|
|
New Jersey Semi-Conductor Products, Inc.
|
Part No. |
BUV20
|
OCR Text |
...i) collector - emitter voltage (vbe = -1 ,5v) collector - emitter voltage (ib = 0) emitter - base voltage (lc = 0) collector current peak collector current (tp = 10 ms) base current total power dissipation at t^g < 25c storage temperature j... |
Description |
NPN MULTI - EPITAXIAL POWER TRANSISTOR
|
File Size |
70.78K /
2 Page |
View
it Online |
Download Datasheet |
|
|
|
New Jersey Semi-Conductor Products, Inc.
|
Part No. |
2N6536
|
OCR Text |
...bol vceo(sus) vcesat-1 vcesat-2 vbe-1 vbe-2 icev i ceo iebo hpe-1 hfe-2 vf parameter collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage base -emitter on voltage base -emitter on vo... |
Description |
Silicon NPN Power Transistors
|
File Size |
66.64K /
2 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|