| PART |
Description |
Maker |
| SD1400-2 RF347 SD1400 SD1400-02 |
RF & MICROWAVE TRANSISTORS 860-900 MHz CLASS C, BASE STATIONS
From old datasheet system
|
MICROSEMI[Microsemi Corporation]
|
| BGD902 BGD902112 |
860 MHz, 18.5 dB gain power doubler amplifier
40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors
|
| PTB20091 |
30 Watts, 470-860 MHz UHF TV Linear Power Transistor
|
ERICSSON[Ericsson]
|
| PTF10162 |
18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
| PTF10020 |
125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
|
Ericsson
|
| HPMX-3002 HPMX-3002T10 |
150 MHz - 960 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Silicon Bipolar RFIC 900 MHz Driver Amplifier
|
http://
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| PTFA081501E PTFA081501F |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864-900 MHz
|
Infineon Technologies AG
|
| MDS150 |
150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 150; P(in) (W): 20; Gain (dB): 10; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55AW-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi Corporation
Microsemi, Corp.
|
| DME150 |
150 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz
|
GHZTECH[GHz Technology]
|
| PTB20177 |
150 Watts, 925-960 MHz Cellular Radio RF Power Transistor
|
ERICSSON[Ericsson]
|
| VAM80 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 8.5A I(C) | SOT-121VAR
80 Watts, 27 Volts, Class AB Defcom 100 - 150 MHz
|
GHZTECH[GHz Technology]
|
