| PART |
Description |
Maker |
| F2202S |
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 1.6A I(D)
FET, Enhancement, ID 1.6 A
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER
|
Polyfet RF Devices
List of Unclassifed Manufacturers
|
| CTLM8110-M832D |
SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER
|
Central Semiconductor Corp
|
| CMRDM357510 |
SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS
|
http://
|
| IRF530_D ON0283 IRF530-D IRF530/D |
100V4A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管（N沟道增强型硅门）)
TMOS POWER FET 14 AMPERES
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| 2SK226 2SK227 2SK225 |
SILICON N-CHANNEL ENHANCEMENT MOSFET
|
HITACHI[Hitachi Semiconductor]
|
| MTP5N40E |
N-Channel Enhancement-Mode Silicon Gate
|
New Jersey Semi-Conduct...
|
| ZVN3310F ZVP3310F ZVP3310FTA ZVP3310F-15 |
SOT23 P-CHANNEL ENHANCEMENT SOT23 P-CHANNEL ENHANCEMENT
SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
Diodes Incorporated
|
| CMNDM8001 |
SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
|
Central Semiconductor Corp
|
| CTLDM7120-M563 |
SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
|
Central Semiconductor Corp
|
| CXDM4060N |
SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET
|
Central Semiconductor Corp
|
