| PART |
Description |
Maker |
| PTF10160 |
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
| TAN350 |
350 Watts, 50 Volts, Pulsed Avionics 960 1215 MHz 350瓦，50伏特，脉冲航空电601215兆赫
TACAN 960-1215 MHz, Class C, Common Base, Pulsed; P(out) (W): 350; P(in) (W): 70; Gain (dB): 7; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
350 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz
|
Electronic Theatre Controls, Inc.
Microsemi, Corp.
ETC[ETC]
List of Unclassifed Manufacturers
|
| MAFRIN0370 |
Single Junction Gull Wing Circulator 860 MHz-960 MHz
|
MACOM[Tyco Electronics]
|
| PTF080101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz
|
Infineon Technologies AG
|
| PTB20155 |
9 Watts, 610-960 MHz UHF Power Transistor 9瓦，610-960 MHz的超高频功率晶体
|
ERICSSON[Ericsson]
|
| PTF10021 |
30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30瓦，1.4-1.6 GHzGOLDMOS场效应晶体管
30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor
30 Watts, 1.4.6 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
|
| JTDA50-2 |
50 Watts, 36 Volts, 960 - 1215 MHz
|
List of Unclassifed Manufacturers
GHz Technology
|
| PTF10100 |
165 Watts/ 860-900 MHz LDMOS Field Effect Transistor
165 Watts 860-900 MHz LDMOS Field Effect Transistor
165 Watts, 860-900 MHz LDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
| PTB20009 |
2.5 Watts, 93560 MHz Cellular Radio RF Power Transistor
2.5 Watts/ 935-960 MHz Cellular Radio RF Power Transistor
2.5 Watts, 935-960 MHz Cellular Radio RF Power Transistor 2.5瓦，935-960兆赫蜂窝无线电射频功率晶体管
|
Ericsson Microelectronics
ERICSSON[Ericsson]
TriQuint Semiconductor, Inc.
|
| TAN75A |
75 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz
|
Microsemi Corporation
|
| PTB20148 |
60 Watts, 92560 MHz Cellular Radio RF Power Transistor
60 Watts, 925-960 MHz Cellular Radio RF Power Transistor
60 Watts/ 925-960 MHz Cellular Radio RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
