| PART |
Description |
Maker |
| SDH03 |
PNP NPN Darlington H-bridge
PNP NPN Darlington Transistors (H-bridge)(PNP NPN达林顿晶体管(H桥）) 1.5 A, 100 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
|
Sanken Electric Co., Ltd.
|
| 2N6298 JANTX2N6298 JANTX2N6299 JAN2N6298 JAN2N6299 |
PNP Darlington Transistor
PNP DARLINGTON POWER SILICON TRANSISTOR
|
MICROSEMI[Microsemi Corporation]
|
| BCP48 BCP28 |
PNP Silicon Darlington Transistors 进步党硅达林顿晶体管
Darlington Transistors - PNP Silicon Darlington Transistor for general AF applications
|
INFINEON[Infineon Technologies AG]
|
| CMPTA64 CMPTA13 CMPTA14 CMPTA63 |
SMD Small Signal Transistor PNP Darlington
complementary silicon darlington transistors
|
Central Semiconductor Corp
|
| CZTA14 CZTA64 |
SMD Small Signal Transistor NPN Darlington
SMD Small Signal Transistor PNP Darlington
SURFACE MOUNT COMPLEMENTARY SILICON DARLINGTON TRANSISTORS
|
CENTRAL[Central Semiconductor Corp]
|
| Q62702-Z2031 Q62702-Z2032 PZTA64 PZTA63 |
PNP Silicon Darlington Transistor for...
From old datasheet system
PNP Silicon Darlington Transistors
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
SIEMENS A G
|
| JANTX2N6287 JANTX2N6286 |
PNP Darlington Transistor; Package: TO-3; 20 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-204AA
PNP Darlington Transistor; Package: TO-3; 20 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA
|
Microsemi, Corp.
|
| MP4305 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| KSH117TF KSH117ITU |
PNP Silicon Darlington Transistor; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-252
2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-251 IPAK-3
|
Fairchild Semiconductor, Corp.
|
| BDX34 BDX34D BDX34A BDX34B BDX34C |
PNP SILICON POWER DARLINGTONS
EMITTER IR 850NM T1 3/4
Transistor de puissance PNP darlington
|
Power Innovations International, Inc.
Power Innovations Limited
|
| CSB810 |
2.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 - 20000 hFE.
TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220AB 晶体管|晶体管|达林顿|进步党| 110伏特五（巴西）总裁| 8A条一（c）| TO - 220AB现有
|
Continental Device India Limited
Won-Top Electronics Co., Ltd.
|
