| PART |
Description |
Maker |
| AH478 AH478Z5-BE1 AH478Z5-BG1 |
SINGLE PHASE HALL EFFECT LATCH WITH LOCKED PROTECTION
MAGNETIC FIELD SENSOR-HALL EFFECT, -10-10mT, RECTANGULAR, THROUGH HOLE MOUNT ROHS COMPLIANT, TO-95
MAGNETIC FIELD SENSOR-HALL EFFECT, -10-10mT, RECTANGULAR, THROUGH HOLE MOUNT GREEN, TO-95
|
BCD Semiconductor Manufacturing Limited
BCD Semiconductor Manufacturing, Ltd.
|
| SSM3K05FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHALLEL MOS TYPE
|
Toshiba Semiconductor
|
| SSM3J09FU |
Field Effect Transistor Silicon P Channel MOS Type Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| 2SK3078A |
Field Effect Transistor Silicon N Channel MOS Type VHF/UHF Band Amplifier Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM3K02F |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 东芝场效应晶体管频道马鞍山类
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
|
Toshiba Corporation
Toshiba, Corp.
Toshiba Semiconductor
|
| AH276Q-PG-B-A AH276Q-PG-B-B AH276Q-PG-B-C AH276Q-P |
COMPLEMENTARY OUTPUT HALL EFFECT LATCH
MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, RECTANGULAR, THROUGH HOLE MOUNT GREEN, SIP-4
MAGNETIC FIELD SENSOR-HALL EFFECT, -5-5mT, RECTANGULAR, THROUGH HOLE MOUNT GREEN, SIP-4
|
Diodes Incorporated
http://
Diodes, Inc.
|
| SSM5N05FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| ATS137 ATS137-P ATS137-PG-7-A ATS137-PG-7-B ATS137 |
SINGLE HALL EFFECT SWITCH MAGNETIC FIELD SENSOR-HALL EFFECT, 1-10mT, 700mV, RECTANGULAR, THROUGH HOLE MOUNT
SINGLE HALL EFFECT SWITCH 单个霍尔效应开
|
Diodes, Inc.
磁阻传感
Diodes Inc.
DIODES[Diodes Incorporated]
|
| PTF10021 |
30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30瓦，1.4-1.6 GHzGOLDMOS场效应晶体管
30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor
30 Watts, 1.4.6 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
|
| AH276Z4-BE1 AH276Z4-AE1 AH276Z4-E1 AH276 AH276Z4-C |
COMPLEMENTARY OUTPUT HALL EFFECT LATCH MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, RECTANGULAR, THROUGH HOLE MOUNT
COMPLEMENTARY OUTPUT HALL EFFECT LATCH 互补输出霍尔效应锁存
COMPLEMENTARY OUTPUT HALL EFFECT LATCH MAGNETIC FIELD SENSOR-HALL EFFECT, -5-5mT, RECTANGULAR, THROUGH HOLE MOUNT
|
BCD Semiconductor Manufacturing, Ltd.
BCDSEMI
BCD Semiconductor Manufacturing Limited
|
