| PART |
Description |
Maker |
| KE524575HB KD621K20HB |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 450V V(BR)CEO | 75A I(C)
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 850V V(BR)CEO | 200A I(C) 晶体管|晶体管电源模块|半桥|达林顿| 850V五（巴西）总裁| 200安培我（丙）
|
CERAMATE TECHNOLOGY CO., Ltd.
|
| CZ300R10KN CC150R10KN CC50R10KN |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 880V V(BR)CEO | 300A I(C) 晶体管|晶体管电源模块|达林顿| 880V五（巴西）总裁| 300我（丙）
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 880V V(BR)CEO | 150A I(C) 晶体管|晶体管电源模块|半桥|达林顿| 880V五（巴西）总裁| 150A一（c
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 880V V(BR)CEO | 50A I(C) 晶体管|晶体管电源模块|半桥|达林顿| 880V五（巴西）总裁| 50A条一（c
|
ON Semiconductor
RECOM Electronic GmbH
|
| 2N1025 2N2176 2N1475 2N1027 2N1474 2N329B 2N1654 2 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 50MA I(C) | TO-5
5-Pin, Multiple-Input, Programmable Reset ICs
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 50MA I(C) | TO-5
68HC11/Bidirectional-Compatible µP Reset Circuit
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 50MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 100MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 100MA I(C) | TO-5
Silicon Transistors
|
Semitronics
|
| ECG105 ECG85 ECG91 ECG90 ECG92 ECG101 |
Pressure (Pa): 770 ( 3.09inchH2O / 75.1 ( 0.30inchH2O ); Noise (dB[A]): 71 / 40; Mass (g): 760;
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 400MA I(C) | TO-92
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 15A I(C) | SIP 晶体管|晶体管| npn型| 200伏五（巴西）总裁| 15A条（c）的|园区
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | TO-5 晶体管|晶体管|叩| 20V的五（巴西）总裁| 300mA的一（c）|
|
NXP Semiconductors N.V.
|
| ECG396 ECG397 ECG395 ECG471 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 1A I(C) | TO-39
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 1A I(C) | TO-39
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 50MA I(C) | TO-72 晶体管|晶体管|进步党| 25V的五（巴西）总裁| 50mA的一（c）|2
TRANSISTOR | BJT | NPN | 36V V(BR)CEO | 15A I(C) | SOT-121
|
Cypress Semiconductor, Corp.
|
| KD424520HB |
TRANSISTOR,BJT POWER MODULE,HALF BRIDGE,DARLINGTON,450V V(BR)CEO,200A I(C)
From old datasheet system
|
Powerex Inc
|
| MG75H2CL1 |
TRANSISTOR,BJT POWER MODULE,HALF BRIDGE,DARLINGTON,500V V(BR)CEO,75A I(C)
From old datasheet system
|
Toshiba.
|
| BUF460F |
TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 450V V(BR)CEO | 80A I(C) 晶体管|晶体管电源模块|独立| 450V五（巴西）总裁|0A条（丙）
|
STMicroelectronics N.V.
|
| QM30TB2HB |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 30A I(C) 晶体管|晶体管电源模块| 3 - PH值大桥| 1KV交五（巴西）总裁| 30A条一（c
|
Mitsubishi Electric, Corp.
|
| QM30TB2H |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 30A I(C) 晶体管|晶体管电源模块| 3 - PH值大桥| 1KV交五（巴西）总裁| 30A条一（c
|
Mitsubishi Electric, Corp.
|
