PART |
Description |
Maker |
MPSA12DA MPSA12DB MPSA12DC MPSA42DB MPSA42DC MPSA4 |
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | CHIP 晶体管|晶体管|进步党| 150伏五(巴西)总裁|芯片 TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | CHIP 晶体管|晶体管|达林顿|叩| 60V的五(巴西)总裁|芯片 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | CHIP 晶体管|晶体管| npn型| 140伏特五(巴西)总裁|芯片 TRANSISTOR | BJT | PNP | 300V V(BR)CEO | CHIP TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | CHIP TRANSISTOR | BJT | NPN | 300V V(BR)CEO | CHIP TRANSISTOR|BJT|DARLINGTON|NPN|CHIP
TRANSISTOR|BJT|DARLINGTON|NPN|30VV(BR)CEO|CHIP
|
Zetex Semiconductor PLC Central Semiconductor, Corp. Cypress Semiconductor, Corp.
|
2SD2309A 2SC3800 2SC3800Q 2SC3800R 2SD2011A 2SD230 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | SIP TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92 SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|叩| 100V的五(巴西)总裁|甲一(c)|园区 TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | SIP 晶体管|晶体管|达林顿|叩| 80V的五(巴西)总裁| 4A条一(c)|园区 TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|进步党| 100V的五(巴西)总裁|甲一(c)|园区 TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-92
|
Avago Technologies, Ltd. Atmel, Corp. HIROSE ELECTRIC Co., Ltd.
|
D72FY4D2 D64DV7 |
TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | TO-252AA TRANSISTOR | BJT | DARLINGTON | NPN | 500V V(BR)CEO | 50A I(C) | TO-3 晶体管|晶体管|达林顿|叩| 500V五(巴西)总裁| 50A条一(c)|
|
Solid State Devices, Inc.
|
DB12508004 DB12408005 |
TRANSISTOR | BJT | DARLINGTON | NPN | 500V V(BR)CEO | 800A I(C) TRANSISTOR | BJT | DARLINGTON | NPN | 400V V(BR)CEO | 800A I(C) 晶体管|晶体管|达林顿|叩| 400V五(巴西)总裁| 800A一(c
|
PHOENIX CONTACT Deutschland GmbH
|
2SD1592 2SD1592L |
Silicon transistor NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-VOLTAGE LOW-SPEED SWITCHING TRANSISTOR | BJT | DARLINGTON | NPN | 300V V(BR)CEO | 5A I(C) | SOT-186
|
NEC Corp.
|
154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五(巴西)总裁| 7.5AI(丙
|
NXP Semiconductors N.V. Bel Fuse, Inc. YEONHO Electronics Co., Ltd.
|
OC28 OC22 OC23 OC30 OC25 OC19 OC36 AUY29IV AUY24 A |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-3 TRANSISTOR | BJT | PNP | 24V V(BR)CEO | 1A I(C) | TO-3 TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1.4A I(C) | TO-66VAR TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 3A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 15A I(C) | TO-41 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-41 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-41 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-41 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 8A条一(c)|1
|
Vicor, Corp. Marktech Optoelectronics
|
2SD1692 2SD1692L 2SD1692K |
NPN SILICON DARLINGTON TRANSISTOR From old datasheet system NPN SILICON POWER TRANSISTOR Low-Power, Single/Dual-Level Battery Monitors with Hysteresis TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 100V的五(巴西)总裁| 3A条一(c)|26
|
NEC Corp. NEC, Corp.
|
CIL858O CIL859O CIL2229Y CIL2331 CSC2331 CIL857O C |
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | TO-237VAR TRANSISTOR | BJT | NPN | 300V V(BR)CEO | TO-237 TRANSISTOR | BJT | NPN | 150V V(BR)CEO | TO-237 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-237VAR TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 700MA I(C) | TO-237AA TRANSISTOR | BJT | NPN | 200V V(BR)CEO | TO-237VAR TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 1.5A I(C) | TO-237AA TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 1.5A I(C) | TO-237 TRANSISTOR | BJT | PNP | 160V V(BR)CEO | TO-237 晶体管|晶体管|进步党| 160V五(巴西)总裁|37 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-237AA
|
Infineon Technologies AG
|
AP1034 AP1038 AP1023 AP1145 AP1037 AP1022 AP1065 A |
TRANSISTOR | BJT | PNP | 275V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-210AC TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 10A I(C) | TO-66 TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 10A I(C) | TO-210AC TRANSISTOR | BJT | PNP | 170V V(BR)CEO | 10A I(C) | TO-5 TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 10A I(C) | TO-33 TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|进步党| 120伏特五(巴西)总裁| 10A条一(c)|
|
SCHURTER AG
|
SLA4031 SLA4010 |
Independent BJT Power Module Darlington BJT Array From old datasheet system
|
Sanken
|
IR2403 |
TRANSISTOR,BJT,ARRAY,DARLINGTON,45V V(BR)CEO,400MA I(C),DIP From old datasheet system
|
Sharp Corp
|